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BSM100GD120DN2 Datasheet(PDF) 2 Page - Infineon Technologies AG |
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BSM100GD120DN2 Datasheet(HTML) 2 Page - Infineon Technologies AG |
2 / 4 page SIGC156T120R2C Edited by INFINEON Technologies AI PS DD HV3, L 7181-M, Edition 2, 03.09.2003 MAXIMUM RATINGS: Parameter Symbol Value Unit Collector-emitter voltage, Tj=25 °C V CE 1200 V DC collector current, limited by Tjmax I C 1 ) A Pulsed collector current, tp limited by Tjmax I cpuls 300 A Gate emitter voltage V GE ±20 V Operating junction and storage temperature Tj, Tstg -55 ... +150 °C 1 ) depending on thermal properties of assembly STATIC CHARACTERISTICS (tested on chip), Tj=25 °C, unless otherwise specified: Value Parameter Symbol Conditions min. typ. max. Unit Collector-emitter breakdown voltage V(BR)CES VGE=0V , IC=5mA 1200 Collector-emitter saturation voltage VCE(sat) VGE=15V, IC=100A 2.0 2.5 3.0 Gate-emitter threshold voltage VGE(th) IC=4mA , VGE=VCE 4.5 5.5 6.5 V Zero gate voltage collector current ICES VCE=1200V , VGE=0V 600 µA Gate-emitter leakage current IGES VCE=0V , VGE=20V 600 nA Integrated gate resistor RGint 5 Ω ELECTRICAL CHARACTERISTICS (tested at component): Value Parameter Symbol Conditions min. typ. max. Unit Input capacitance Ciss - 6.5 - Output capacitance Coss - 1 - Reverse transfer capacitance Crss V CE=25V, V GE=0V, f =1MHz - 0.5 - nF SWITCHING CHARACTERISTICS (tested at component), Inductive Load Value Parameter Symbol Conditions 1) min. typ. max. Unit Turn-on delay time t d(on) - 160 320 Rise time t r - 80 160 Turn-off delay time t d(off) - 400 520 Fall time t f Tj=125 ° C V CC =600V, I C =100A, V GE=+15/ - 15V, RG=6.8 Ω - 70 100 ns 1) values also influenced by parasitic L- and C- in measurement and package. |
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