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AO4703L Datasheet(PDF) 1 Page - Alpha & Omega Semiconductors |
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AO4703L Datasheet(HTML) 1 Page - Alpha & Omega Semiconductors |
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1 / 5 page  Symbol Units VDS V VGS V TA=25°C TA=70°C IDM VKA V TA=25°C TA=70°C IFM TA=25°C TA=70°C TJ, TSTG °C Symbol Units RθJL RθJL Maximum Junction-to-Lead C Steady-State Pulsed Forward Current B RθJA 40 Maximum Junction-to-Ambient A t ≤ 10s RθJA Maximum Junction-to-Ambient A Steady-State 75 75 Maximum Junction-to-Lead C Steady-State 21 -55 to 150 Typ Maximum Junction-to-Ambient A Steady-State Continuous Forward Current A Parameter: Thermal Characteristics MOSFET Maximum Junction-to-Ambient A t ≤ 10s Parameter -55 to 150 A Absolute Maximum Ratings TA=25°C unless otherwise noted PD ID 4.4 A 3.2 30 Continuous Drain Current A Gate-Source Voltage Schottky Drain-Source Voltage IF Thermal Characteristics Schottky 40 30 28 54 Max °C/W °C/W MOSFET -30 ±25 -12 -10 -60 3 Pulsed Drain Current B Junction and Storage Temperature Range 3 W Schottky reverse voltage 30 2.1 2.1 Power Dissipation AO4703 P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode Features VDS (V) = -30V ID = -12A (VGS =- 20V) RDS(ON) < 14mΩ (VGS =- 20V) RDS(ON) < 15mΩ (VGS = -10V) SCHOTTKY VDS (V) = 30V, IF = 3A, VF=0.5V@1A General Description The AO4703 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. A Schottky diode is provided to facilitate the implementation of non-synchronous DC-DC converters. Standard Product AO4703 is Pb-free (meets ROHS & Sony 259 specifications). AO4703L is a Green Product ordering option. AO4703 and AO4703L are electrically identical. G D S A K G S S A D/K D/K D/K D/K 1 2 3 4 8 7 6 5 SOIC-8 Alpha & Omega Semiconductor, Ltd. |
Similar Part No. - AO4703L |
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Similar Description - AO4703L |
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