AO3406

Symbol

Min

Typ

Max

Units

30

V

1

5

100

nA

1

1.9

3

V

15

A

50

65

74

100

75

105

m

Ω

7S

0.79

1

V

2.5

A

288

375

pF

57

pF

39

pF

36

Ω

6.5

8.5

nC

3.1

4

nC

1.2

nC

1.6

nC

4.6

ns

1.9

ns

20.1

ns

2.6

ns

10.2

14

ns

3.5

nC

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Turn-Off Fall Time

Body Diode Reverse Recovery Time

Drain-Source Breakdown Voltage

On state drain current

Zero Gate Voltage Drain Current

Gate-Body leakage current

µA

Gate Threshold Voltage

STATIC PARAMETERS

Parameter

Conditions

Static Drain-Source On-Resistance

Forward Transconductance

Diode Forward Voltage

m

Ω

Turn-On Rise Time

Gate resistance

SWITCHING PARAMETERS

Total Gate Charge

Total Gate Charge

Reverse Transfer Capacitance

Turn-Off DelayTime

Maximum Body-Diode Continuous Current

Input Capacitance

Output Capacitance

Gate Drain Charge

DYNAMIC PARAMETERS

Gate Source Charge

Turn-On DelayTime

The value in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal

resistance rating.

B: Repetitive rating, pulse width limited by junction temperature.

D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80

µs pulses, duty cycle 0.5% max.

E. These tests are performed with the device mounted on 1 in

SOA curve provides a single pulse rating.

Rev 5 : July 2005

Alpha and Omega Semiconductor, Ltd.