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XP01216 Datasheet(PDF) 1 Page - Panasonic Semiconductor |
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XP01216 Datasheet(HTML) 1 Page - Panasonic Semiconductor |
1 / 3 page 1 Publication date: June 2003 SJJ00141BED Composite Transistors XP01216 (XP1216) Silicon NPN epitaxial planar type For switching/digital circuits ■ Features • Two elements incorporated into one package (Emitter-coupled transistors with built-in resistor) • Reduction of the mounting area and assembly cost by one half ■ Basic Part Number • UNR2216 (UN2216) × 2 ■ Absolute Maximum Ratings T a = 25°C Unit: mm Internal Connection Marking Symbol: 9N Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 50 V Collector-emitter voltage (Base open) VCEO 50 V Collector current IC 100 mA Total power dissipation PT 150 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Ratio between 2 elements 12 Tr1 Tr2 3 4 5 Note) The part number in the parenthesis shows conventional part number. ■ Electrical Characteristics T a = 25°C ± 3°C 1: Base (Tr1) 4: Collector (Tr2) 2: Emitter 5: Collector (Tr1) 3: Base (Tr2) EIAJ: SC-88A SMini5-G1 Package 1 3 2 0.20±0.05 1.3±0.1 2.0±0.1 54 (0.65) (0.65) 0.12 +0.05 –0.02 10˚ Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) VCBO IC = 10 µA, I E = 050 V Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 050 V Collector-base cutoff current (Emitter open) ICBO VCB = 50 V, IE = 0 0.1 µA Collector-emitter cutoff current (Base open) ICEO VCE = 50 V, I B = 0 0.5 µA Emitter-base cutoff current (Collector open) IEBO VEB = 6 V, IC = 0 0.01 mA Forward current transfer ratio hFE VCE = 10 V, IC = 5 mA 160 460 hFE Ratio * hFE(Small VCE = 10 V, IC = 5 mA 0.50 0.99 /Large) Collector-emitter saturation voltage VCE(sat) IC = 10 mA, I B = 0.3 mA 0.25 V Output voltage high-level VOH VCC = 5 V, VB = 0.5 V, RL = 1 kΩ 4.9 V Output voltage low-level VOL VCC = 5 V, VB = 2.5 V, RL = 1 kΩ 0.2 V Input resistance R1 −30% 4.7 +30% k Ω Transition frequency fT VCB = 10 V, IE = −2 mA, f = 200 MHz 150 MHz |
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