IXFV18N60P datasheet(1/5 Pages) IXYS

Part #	IXFV18N60P

Description	PolarHV HiPerFET Power MOSFET

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Manufacturer	IXYS [IXYS Corporation]

Direct Link	http://www.ixys.com

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G = Gate

D = Drain

S = Source

TAB = Drain

DS99390E(03/06)

PolarHVTM HiPerFET

Power MOSFET

IXFH 18N60P

IXFV 18N60P

IXFV 18N60PS

N-Channel Enhancement Mode

Fast Intrinsic Diode

Avalanche Rated

Features

l

International standard packages

l

Unclamped Inductive Switching (UIS)

rated

l

Low package inductance

- easy to drive and to protect

Advantages

l

Easy to mount

l

Space savings

l

High power density

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, unless otherwise specified)

Min.

Typ.

Max.

BV

DSS

V

GS = 0 V, ID = 250 μA

600

V

GS(th)

V

DS

= V

GS, ID = 2.5 mA

3.0

5.5

V

I

GSS

V

GS = ±30 V, VDS = 0 V

±100

nA

I

DSS

V

DS

= V

DSS

25

μA

V

GS = 0 V

T

J = 125°C

250

μA

R

DS(on)

V

GS = 10 V, ID = 0.5 ID25

400

m

Ω

Pulse test, t

≤ 300 μs, duty cycle d ≤ 2 %

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 150°C

600

V

DGR

T

J

= 25

°C to 150°C; R

GS = 1 MΩ

600

V

GS

Continuous

±30

V

GSM

Tranisent

±40

V

I

D25

T

C = 25°C18

A

I

DM

T

C = 25°C, pulse width limited by TJM

45

A

I

AR

T

C = 25°C18

A

E

AR

T

C = 25°C30

mJ

E

AS

T

C = 25°C

1.0

J

dv/dt

I

S

≤ I

DM, di/dt ≤ 100 A/μs, VDD ≤ VDSS,

10

V/ns

T

J

≤ 150°C, R

G = 5 Ω

P

D

T

C = 25°C

360

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

T

L

1.6 mm (0.062 in.) from case for 10 s

300

°C

T

SOLD

Plastic body for 10 s

260

°C

M

d

Mounting torque

(TO-247)

1.13/10 Nm/lb.in.

Weight

TO-247

6

g

PLUS220 & PLUS220SMD

4

g

G

S

D

PLUS220 (IXFV)

G

S

PLUS220SMD (IXFV...S)

D (TAB)

TO-247 AD (IXFH)

V

DSS

=

600

V

I

D25

=18

A

R

DS(on)

≤≤≤≤≤ 400 mΩ

Ω

t

rr

≤≤≤≤≤ 200 ns

D (TAB)

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