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K9F5608D0C Datasheet(PDF) 8 Page - Samsung semiconductor

Part # K9F5608D0C
Description  32M x 8 Bit 16M x 16 Bit NAND Flash Memory
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Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

K9F5608D0C Datasheet(HTML) 8 Page - Samsung semiconductor

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FLASH MEMORY
8
K9F5608D0C
K9F5608Q0C
K9F5608U0C
K9F5616D0C
K9F5616Q0C
K9F5616U0C
512Byte
16 Byte
Figure 1-1. K9F5608X0C (X8) FUNCTIONAL BLOCK DIAGRAM
Figure 2-1. K9F5608X0C (X8) ARRAY ORGANIZATION
NOTE : Column Address : Starting Address of the Register.
00h Command(Read) : Defines the starting address of the 1st half of the register.
01h Command(Read) : Defines the starting address of the 2nd half of the register.
* A8 is set to "Low" or "High" by the 00h or 01h Command.
* The device ignores any additional input of address cycles than reguired.
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
1st Cycle
A0
A1
A2
A3
A4
A5
A6
A7
2nd Cycle
A9
A10
A11
A12
A13
A14
A15
A16
3rd Cycle
A17
A18
A19
A20
A21
A22
A23
A24
VCC
X-Buffers
256M + 8M Bit
Command
NAND Flash
ARRAY
(512 + 16)Byte x 65536
Y-Gating
Page Register & S/A
I/O Buffers & Latches
Latches
& Decoders
Y-Buffers
Latches
& Decoders
Register
Control Logic
& High Voltage
Generator
Global Buffers
Output
Driver
VSS
A9 - A24
A0 - A7
Command
CE
RE
WE
WP
I/0 0
I/0 7
VCC/VCCQ
VSS
A8
1st half Page Register
(=256 Bytes)
2nd half Page Register
(=256 Bytes)
64K Pages
(=2,048 Blocks)
512 Byte
8 bit
16 Byte
1 Block =32 Pages
= (16K + 512) Byte
I/O 0 ~ I/O 7
1 Page = 528 Byte
1 Block = 528 Byte x 32 Pages
= (16K + 512) Byte
1 Device = 528Bytes x 32Pages x 2048 Blocks
= 264 Mbits
Column Address
Row Address
(Page Address)
Page Register
CLE ALE


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