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ALD1103 Datasheet(PDF) 1 Page - Advanced Linear Devices |
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ALD1103 Datasheet(HTML) 1 Page - Advanced Linear Devices |
1 / 6 page DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED PAIR MOSFET GENERAL DESCRIPTION The ALD1105 is a monolithic dual N-channel and dual P-channel complementary matched transistor pair intended for a broad range of analog applications. These enhancement-mode transistors are manufactured with Advanced Linear Devices' enhanced ACMOS silicon gate CMOS process. It consists of an ALD1116 N-channel MOSFET pair and an ALD1117 P-channel MOSFET pair in one package. The ALD1105 is a low drain current, low leakage current version of the ALD1103. The ALD1105 offers high input impedance and negative current temperature coefficient. The transistor pair is matched for minimum offset voltage and differential thermal response, and it is designed for precision signal switching and amplifying applications in +1V to +12V systems where low input bias current, low input capacitance and fast switching speed are desired. Since these are MOSFET devices, they feature very large (almost infinite) current gain in a low frequency, or near DC, operating environment. When used in complementary pairs, a dual CMOS analog switch can be constructed. In addition, the ALD1105 is intended as a building block for differential amplifier input stages, transmission gates, and multiplexer applications. The ALD1105 is suitable for use in precision applications which require very high current gain, beta, such as current mirrors and current sources. The high input impedance and the high DC current gain of the field effect transistors result in extremely low current loss through the control gate. The DC current gain is limited by the gate input leakage current, which is specified at 30pA at room temperature. For example, DC beta of the device at a drain current of 3mA at 25 °C is = 3mA/30pA = 100,000,000. FEATURES • Thermal tracking between N-channel and P-channel pairs • Low threshold voltage of 0.7V for both N-channel & P-channel MOSFETs • Low input capacitance • Low Vos -- 10mV • High input impedance -- 1013 Ω typical • Low input and output leakage currents • Negative current (IDS) temperature coefficient • Enhancement mode (normally off) • DC current gain 109 • Matched N-channel pair and matched P-channel pair in one package ALD1105 ADVANCED LINEAR DEVICES, INC. PIN CONFIGURATION APPLICATIONS • Precision current mirrors • Complementary push-pull linear drives • Discrete Analog switches • Analog signal Choppers • Differential amplifier input stage • Voltage comparator • Data converters • Sample and Hold • Analog current inverter • Precision matched current sources DN2 GN2 SN2 GP2 SP2 GN1 SN1 DP1 GP1 1 2 3 4 DB, PB, SB PACKAGE 5 6 7 8 9 10 11 12 13 14 DN1 V+ V- DP2 SP1 BLOCK DIAGRAM N SOURCE 1 (3) SUBSTRATE (4) N SOURCE 2 (12) N GATE 2 (13) N DRAIN 1 (1) N GATE 1 (2) N DRAIN 2 (14) P SOURCE 1 (7) SUBSTRATE (11) P SOURCE 2 (8) P GATE 2 (9) P DRAIN 1 (5) P GATE 1 (6) P DRAIN 2 (10) Operating Temperature Range* -55 °C to +125°C0°C to +70°C0°C to +70°C 14-Pin 14-Pin 14-Pin CERDIP Plastic Dip SOIC Package Package Package ALD1105 DB ALD1105 PB ALD1105 SB * Contact factory for industrial temperature range. ORDERING INFORMATION © 2005 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, California 94089 -1706 Tel: (408) 747-1155 Fax: (408) 747-1286 http://www.aldinc.com |
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