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AP2201K2.8TR Datasheet(PDF) 8 Page - BCD Semiconductor Manufacturing Limited |
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AP2201K2.8TR Datasheet(HTML) 8 Page - BCD Semiconductor Manufacturing Limited |
8 / 12 page 150mA RF ULDO REGULATOR AP2201 Preliminary Datasheet 8 Jun. 2005 Rev. 1. 0 BCD Semiconductor Manufacturing Limited Typical Performance Characteristics (Continued) Figure 9. Enable Current vs. Junction Temperature Figure 10. Enable Voltage vs. Junction Temperature -60 -40 -20 0 20 40 60 80 100 120 140 0 2 4 6 8 10 12 14 16 18 20 V EN =1.8V V EN =2.0V V EN =3.0V V EN =4.0V V IN =3.8V, C IN =1.0µF, C L =2.2µF, I OUT =100µA, C BYP =1nF Junction Temperature ( oC) AP2201-2.8V -60 -40 -20 0 20 40 60 80 100 120 140 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 Junction Temperature ( oC) AP2201-2.8V V EN =on V EN =off C IN =1.0µF,C L =2.2µF,C BYP =1nF V IN =3.8V,I OUT =5mA Figure 11. Noise vs. Bypass Capacitor Figure 12. Load Transient 10 100 1000 10000 0 50 100 150 200 Bypass Capacitor (pF) (Conditions: VIN=3.8V, CBYP=680pF, VEN=2V, IOUT=5mA to 50mA, CL=2.2µF) Time ( µs) AP2201-2.8V |
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