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AP2202K-2.9TR Datasheet(PDF) 8 Page - BCD Semiconductor Manufacturing Limited |
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AP2202K-2.9TR Datasheet(HTML) 8 Page - BCD Semiconductor Manufacturing Limited |
8 / 13 page 150mA RF ULDO REGULATOR AP2202 Preliminary Datasheet 8 Aug. 2005 Rev. 1. 3 BCD Semiconductor Manufacturing Limited Typical Performance Characteristics Figure 4. Output Voltage vs. Junction Temperature -60 -40 -20 0 20 40 60 80 100 120 140 2.700 2.725 2.750 2.775 2.800 2.825 2.850 2.875 2.900 Junction Temperature ( oC) AZ2202-2.8V Figure 5. Dropout Voltage vs. Junction Temperature -60 -40 -20 0 20 40 60 80 100 120 140 0 50 100 150 200 250 300 350 Junction Temperature ( oC) I OUT =50mA I OUT =100mA I OUT =150mA C IN =1.0µF, C L =2.2µF, C BYP =1nF Electrical Characteristics (Continued) Note 3: Output voltage temperature coefficient is defined as the worst case voltage change divided by the total temperature range. Note 4: Regulation is measured at constant junction temperature using low duty cycle pulse testing. Parts are tested for load regulation in the load range from 0.1mA to 150mA. Changes in output voltage due to heating effects are covered by the thermal regulation specification. Note 5: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value measured at 1V differential. Note 6: Ground pin current is the regulator quiescent current plus pass transistor base current. The total current drawn from the supply is the sum of the load current plus the ground pin current. Figure 6. Quiescent Current vs. Output Current Figure 7. Quiescent Current vs. Junction Temperature -60 -40 -20 0 20 40 60 80 100 120 140 -2000 -1000 0 1000 2000 3000 4000 5000 AP2202-2.8V I OUT =50mA I OUT =100mA I OUT =150mA V IN =3.8V,V EN =2.0V,C IN =1.0µF, C L =2.2µF,C BYP =1nF Junction Temperature ( oC) 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 -4 -3 -2 -1 0 1 2 3 4 5 6 Output Current (mA) |
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