K6R1008V1C-I10 datasheet(8/9 Pages) SAMSUNG

Part #	K6R1008V1C-I10

Description	128Kx8 Bit High-Speed CMOS Static RAM(3.3V Operating).

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Manufacturer	SAMSUNG [Samsung semiconductor]

Direct Link	http://www.samsung.com/Products/Semiconductor

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K6R1008V1C-C/C-L, K6R1008V1C-I/C-P

CMOS SRAM

PRELIMINARY

Revision 4.0

- 8 -

September 2001

PRELIMINARY

P

DATA RETENTION CHARACTERISTICS*(TA=0 to 70

°C)

* The above parameters are also guaranteed at industrial temperature range.

Data Retention Characteristic is for L-ver only.

Parameter

Symbol

Test Condition

Min.

Typ.

Max.

Unit

VCC for Data Retention

VDR

CS

≥VCC-0.2V

2.0

-

3.6

V

Data Retention Current

IDR

VCC=3.0V, CS

≥VCC-0.2V

VIN

≥VCC-0.2V or VIN≤0.2V

-

0.4

mA

VCC=2.0V, CS

≥VCC-0.2V

VIN

≥VCC-0.2V or VIN≤0.2V

-

0.3

Data Retention Set-Up Time

tSDR

See Data Retention

Wave form(below)

0

-

ns

Recovery Time

tRDR

5

-

ms

DATA RETENTION WAVE FORM

CS controlled

VCC

3.0V

VIH

VDR

CS

GND

Data Retention Mode

CS

≥VCC - 0.2V

tSDR

tRDR

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K6R1008V1C-I10 Datasheet(PDF) 8 Page - Samsung semiconductor

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