K6R1008V1C-C/C-L, K6R1008V1C-I/C-P

CMOS SRAM

PRELIMINARY

Revision 4.0

- 1 -

September 2001

PRELIMINARY

P

Document Title

128Kx8 Bit High-Speed CMOS Static RAM(3.3V Operating).

Operated at Commercial and Industrial Temperature Ranges.

Revision History

The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the

specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-

tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.

Rev.No.

Rev. 0.0

Rev. 1.0

Rev. 2.0

Rev. 3.0

Rev. 3.1

Rev. 4.0

Remark

Preliminary

Preliminary

Final

Final

Final

Final

History

Initial release with Preliminary.

Relax DC characteristics.

Release to Final Data Sheet.

2.1. Delete Preliminary.

2.2. Changed Standby Current.

2.3. Added Data Retention Characteristics.

Add 10ns part.

Delete 20ns speed bin

Item

Previous

Changed

12ns

70mA

75mA

15ns

68mA

73mA

20ns

65mA

70mA

Item

Previous

Changed

Standby Current(Isb1)

0.3mA

0.5mA

Item

Previous

Changed

Min

Max

Min

Max

2.0

2.0

-0.5

0.8

-0.3

0.8

Draft Data

Aug. 5. 1998

Sep. 7. 1998

Mar. 3. 1999

Apr. 24. 2000

Oct. 2. 2000

Sep. 24. 2001