K6T1008V2C, K6T1008U2C Family

CMOS SRAM

Revision 2.0

November 1997

2

128K x8 bit Low Power and Low Voltage CMOS Static RAM

GENERAL DESCRIPTION

The K6T1008V2C and K6T1008U2C families are fabricated by

SAMSUNG

′s advanced CMOS process technology. The fami-

lies support various operating temperature ranges and have

various package types for user flexibility of system design. The

families also supports low data retention voltage for battery

back-up operation with low data retention current.

FEATURES

• Process Technology: 0.4µm CMOS

• Organization: 128K x8

• Power Supply Voltage:

K6T1008V2C family: 3.0~3.6V

K6T1008U2C family: 2.7~3.3V

• Low Data Retention Voltage: 2V(Min)

• Three state output and TTL Compatible

• Package Type: 32-SOP-525, 32-TSOP1-0820F/R,

32-TSOP1-0813.4F/R

Name

Function

Chip Select Inputs

OE

Output Enable Input

WE

Write Enable Input

Address Inputs

Data Inputs/Outputs

Vcc

Power

Vss

Ground

N.C

No Connection

PRODUCT FAMILY

Product Family

Operating Temperature

Vcc Range

Speed

Power Dissipation

PKG Type

Standby

Operating

K6T1008V2C-B

Commercial(0~70

°C)

3.0~3.6V

70/100ns

10

µA

35mA

32-SOP

32-TSOP1-F/R

32-sTSOP1-F/R

K6T1008U2C-B

2.7~3.3V

85/100ns

K6T1008V2C-D

Extended(-25~85

°C)

3.0~3.6V

70/100ns

K6T1008U2C-D

2.7~3.3V

85/100ns

K6T1008V2C-F

Industrial(-40~85

°C)

3.0~3.6V

70/100ns

K6T1008U2C-F

2.7~3.3V

85/100ns

FUNCTIONAL BLOCK DIAGRAM

PIN DESCRIPTION

32-TSOP

Type1-Reverse

A11

A9

A8

A13

WE

CS2

A15

VCC

NC

A16

A14

A12

A7

A6

A5

A4

OE

A10

CS1

I/O8

I/O7

I/O6

I/O5

I/O4

VSS

I/O3

I/O2

I/O1

A0

A1

A2

A3

Type1-Forward

32

31

30

29

28

27

26

25

24

23

22

21

20

19

18

17

1

2

3

4

5

6

7

8

9

10

11

12

13

14

15

16

N.C

A16

A14

A12

A7

A6

A5

A4

A3

A2

A1

A0

I/O1

I/O2

I/O3

VSS

VCC

A15

CS2

WE

A13

A8

A9

A11

OE

A10

CS1

I/O8

I/O7

I/O6

I/O5

I/O4

32

31

30

29

28

27

26

25

24

23

22

21

20

19

18

17

1

2

3

4

5

6

7

8

9

10

11

12

13

14

15

16

32-SOP

A11

A9

A8

WE

A13

CS2

VCC

A15

NC

A16

A14

A12

A7

A6

A5

A4

OE

A10

CS1

I/O8

I/O7

I/O6

I/O5

I/O4

VSS

I/O3

I/O2

I/O1

A0

A1

A2

A3

32

31

30

29

28

27

26

25

24

23

22

21

20

19

18

17

1

2

3

4

5

6

7

8

9

10

11

12

13

14

15

16

32-TSOP

SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.

Precharge circuit.

Memory array

1024 rows

128

×8 columns

I/O Circuit

Column select

Clk gen.

Row

select

A10 A0

A1

A2

A3

A11

A9

Data

cont

A4

A5

A6

A7

A8

A12

A14

A13

A15

A16

CS1

WE

OE

Control

logic

CS2