K7D323674A datasheet(5/19 Pages) SAMSUNG

Part #	K7D323674A

Description	32Mb A-die DDR SRAM Specification

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Manufacturer	SAMSUNG [Samsung semiconductor]

Direct Link	http://www.samsung.com/Products/Semiconductor

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5 / 19 page

Rev 1.4

1Mx36 & 2Mx18 SRAM

- 5 -

Oct. 2005

K7D321874A

K7D323674A

FUNCTIONAL BLOCK DIAGRAM

K,K

B1

B3

B2

Register

CE

Memory Array

1Mx36

Data Out

Data In

Advance

Control

SD/DD

Co

Clock

Synchronous

Buffer

Internal

Clock

Generator

CE

R/W

LD

Data Output Strobe

Data Output Enable

State Machine

Strobe_out

S/A Array

2 : 1 MUX

Data In

Register

Write Buffer

W/D

Array

Echo Clock

Output

36(or 18)x2

36(or18)x2

XDIN

CQ,CQ

DQ

36(or 18)

Select

&

R/W control

Output

Buffer

Write

CE

Burst

Counter

Register

Address

Comparator

2:1

MUX

Dec.

20(or 21)

18(or 19)

20(or 21)

(Burst Write

SA[0:20]( or SA[0:21])

or

(2Mx18)

(2 stage)

(Burst Address)

Address)

PIN DESCRIPTION

Pin Name

Pin Description

Pin Name

Pin Description

K, K

Differential Clocks

TCK

JTAG Test Clock

SA

Synchronous Address Input

TMS

JTAG Test Mode Select

SA0, SA1

Synchronous Burst Address Input (SA0 = LSB)

TDI

JTAG Test Data Input

DQ

Synchronous Data I/O

TDO

JTAG Test Data Output

CQ, CQ

Differential Output Echo Clocks

VREF

HSTL Input Reference Voltage

B1

Load External Address

VDD

Power Supply

B2

Burst R/W Enable

VDDQ

Output Power Supply

B3

Single/Double Data Selection

VSS

GND

LBO

Linear Burst Order

NC

No Connection

ZQ

Output Driver Impedance Control Input

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K7D323674A Datasheet(PDF) 5 Page - Samsung semiconductor

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