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LN66F Datasheet(PDF) 1 Page - Panasonic Semiconductor

Part # LN66F
Description  GaAs Infrared Light Emitting Diode
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Manufacturer  PANASONIC [Panasonic Semiconductor]
Direct Link  http://www.panasonic.com/industrial/
Logo PANASONIC - Panasonic Semiconductor

LN66F Datasheet(HTML) 1 Page - Panasonic Semiconductor

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1
Infrared Light Emitting Diodes
ø5.0
±0.2
2.54
2-1.0
±0.15
2-0.6
±0.15
1
2
1: Cathode
2: Anode
Unit : mm
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Symbol
Ratings
Unit
Power dissipation
PD
75
mW
Forward current (DC)
IF
50
mA
Pulse forward current
IFP*
1.5
A
Reverse voltage (DC)
VR
3V
Operating ambient temperature
Topr
–25 to +85
˚C
Storage temperature
Tstg
– 40 to +100
˚C
* f = 100 Hz, Duty cycle = 0.1 %
LN66F
GaAs Infrared Light Emitting Diode
For light source of remote control systems
Features
High-power output, high-efficiency : Ie = 13.0 mW/sr (min.)
Emitted light spectrum suited for silicon photodetectors
Narrow directivity :
θ = 15 deg. (typ.)
Transparent epoxy resin package
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Radiant intensity at center
Ie
IF = 50mA
13
mW/sr
Peak emission wavelength
λ
P
IF = 50mA
950
nm
Spectral half band width
∆λ
IF = 50mA
50
nm
Forward voltage (DC)
VF
IF = 50mA
1.35
1.50
V
Pulse forward voltage
VFP*
IFP = 1.0A
3.0
V
Reverse current (DC)
IR
VR = 3V
10
µA
Capacitance between pins
Ct
VR = 0V, f = 1MHz
20
pF
Half-power angle
θ
The angle in which radiant intencity is 50%
15
deg.
* f = 100 Hz, Duty cycle = 0.1 %


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