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SST25VF040-20-4C-S2AE Datasheet(PDF) 8 Page - Silicon Storage Technology, Inc |
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SST25VF040-20-4C-S2AE Datasheet(HTML) 8 Page - Silicon Storage Technology, Inc |
8 / 24 page 8 Data Sheet 2 Mbit / 4 Mbit SPI Serial Flash SST25VF020 / SST25VF040 ©2004 Silicon Storage Technology, Inc. S71231-04-000 6/04 Instructions Instructions are used to Read, Write (Erase and Program), and configure the SST25VF020/040. The instruction bus cycles are 8 bits each for commands (Op Code), data, and addresses. Prior to executing any Byte-Program, Auto Address Increment (AAI) programming, Sector-Erase, Block-Erase, or Chip-Erase instructions, the Write-Enable (WREN) instruction must be executed first. The complete list of the instructions is provided in Table 6. All instructions are synchronized off a high to low transition of CE#. Inputs will be accepted on the rising edge of SCK starting with the most significant bit. CE# must be driven low before an instruction is entered and must be driven high after the last bit of the instruction has been shifted in (except for Read, Read-ID and Read-Status-Register instructions). Any low to high transition on CE#, before receiving the last bit of an instruction bus cycle, will terminate the instruction in progress and return the device to the standby mode. Instruction commands (Op Code), addresses, and data are all input from the most significant bit (MSB) first. TABLE 6: DEVICE OPERATION INSTRUCTIONS1 1. AMS = Most Significant Address AMS = A17 for SST25VF020 and A18 for SST25VF040 Address bits above the most significant bit of each density can be VIL or VIH Bus Cycle2 2. One bus cycle is eight clock periods. 12 3 4 5 Cycle Type/Operation3,4 3. Operation: SIN = Serial In, SOUT = Serial Out 4. X = Dummy Input Cycles (VIL or VIH); - = Non-Applicable Cycles (Cycles are not necessary) SIN SOUT SIN SOUT SIN SOUT SIN SOUT SIN SOUT Read 03H Hi-Z A23-A16 Hi-Z A15-A8 Hi-Z A7-A0 Hi-Z X DOUT Sector-Erase5,6 5. Sector addresses: use AMS-A12, remaining addresses can be VIL or VIH 6. Prior to any Byte-Program, AAI-Program, Sector-Erase, Block-Erase, or Chip-Erase operation, the Write-Enable (WREN) instruction must be executed. 20H Hi-Z A23-A16 Hi-Z A15-A8 Hi-Z A7-A0 Hi-Z - - Block-Erase5,7 7. Block addresses for: use AMS-A15, remaining addresses can be VIL or VIH 52H Hi-Z A23-A16 Hi-Z A15-A8 Hi-Z A7-A0 Hi-Z - - Chip-Erase6 60H Hi-Z - - - - - - - - Byte-Program6 02H Hi-Z A23-A16 Hi-Z A15-A8 Hi-Z A7-A0 Hi-Z DIN Hi-Z Auto Address Increment (AAI) Program6,8 8. To continue programming to the next sequential address location, enter the 8-bit command, AFH, followed by the data to be programmed. AFH Hi-Z A23-A16 Hi-Z A15-A8 Hi-Z A7-A0 Hi-Z DIN Hi-Z Read-Status-Register (RDSR) 05H Hi-Z X DOUT -Note9 9. The Read-Status-Register is continuous with ongoing clock cycles until terminated by a low to high transition on CE#. -Note9 -Note9 Enable-Write-Status-Register (EWSR)10 10. The Enable-Write-Status-Register (EWSR) instruction and the Write-Status-Register (WRSR) instruction must work in conjunction of each other. The WRSR instruction must be executed immediately (very next bus cycle) after the EWSR instruction to make both instructions effective. 50H Hi-Z - - - - - - - - Write-Status-Register (WRSR)10 01H Hi-Z Data Hi-Z - - -. - - - Write-Enable (WREN) 06H Hi-Z - - - - - - - - Write-Disable (WRDI) 04H Hi-Z - - - - - - - - Read-ID 90H or ABH Hi-Z 00H Hi-Z 00H Hi-Z ID Addr11 11. Manufacturer’s ID is read with A0=0, and Device ID is read with A0=1. All other address bits are 00H. The Manufacturer’s and Device ID output stream is continuous until terminated by a low to high transition on CE# Hi-Z X DOUT12 12. Device ID = 43H for SST25VF020 and 44H for SST25VF040 T6.0 1231 |
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