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K1S2816BCM Datasheet(PDF) 6 Page - Samsung semiconductor |
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K1S2816BCM Datasheet(HTML) 6 Page - Samsung semiconductor |
6 / 10 page Revision 1.0 April 2005 K1S2816BCM - 6 - UtRAM AC OPERATING CONDITIONS TEST CONDITIONS(Test Load and Test Input/Output Reference) Input pulse level: 0.2 to Vcc-0.2V Input rising and falling time: 3ns Input and output reference voltage: 0.5 x VCC Output load (See right): CL=30pF AC CHARACTERISTICS (Vcc=1.7~2.0V, TA=-40 to 85°C) 1. tWP(min)=70ns for continuous write operation over 50 times. Parameter List Symbol Speed Bins Units 70ns Min Max Read Read Cycle Time tRC 70 - ns Address Access Time tAA -70 ns Chip Select to Output tCO -70 ns Output Enable to Valid Output tOE -35 ns UB, LB Access Time tBA -70 ns Chip Select to Low-Z Output tLZ 10 - ns UB, LB Enable to Low-Z Output tBLZ 10 - ns Output Enable to Low-Z Output tOLZ 5- ns Chip Disable to High-Z Output tHZ 025 ns UB, LB Disable to High-Z Output tBHZ 025 ns Output Disable to High-Z Output tOHZ 025 ns Output Hold from Address Change tOH 3- ns Page Cycle tPC 25 - ns Page Access Time tPA -20 ns Write Write Cycle Time tWC 70 - ns Chip Select to End of Write tCW 60 - ns Address Set-up Time tAS 0- ns Address Valid to End of Write tAW 60 - ns UB, LB Valid to End of Write tBW 60 - ns Write Pulse Width tWP 551) -ns WE High Pulse Width tWHP 5- ns Write Recovery Time tWR 0- ns Write to Output High-Z tWHZ 025 ns Data to Write Time Overlap tDW 30 - ns Data Hold from Write Time tDH 0- ns End Write to Output Low-Z tOW 5- ns Vtt=0.5 x VDDQ 50 Ω Dout 30pF Z0=50 Ω AC Output Load Circuit |
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