AS4LC4M4F1 datasheet(6/14 Pages) ALSC

Part #	AS4LC4M4F1

Description	4M횞4 CMOS DRAM (Fast Page) 3.3V Family

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Manufacturer	ALSC [Alliance Semiconductor Corporation]

Direct Link	https://www.alliancememory.com

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6 / 14 page

AS4LC4M4F1

5/16/01; v.1.0 Restored

Alliance Semiconductor

P. 6 of 14

®

Fast page mode cycle

Output enable

Self-refresh cycle

Symbol

Parameter

-50

-60

Unit

Notes

Min

Max

Min

Max

tCPA

Access time from CAS precharge

–

28

–

35

13

tRASP

RAS

pulse width

50

100K

60

100K

tPC

Read-write cycle time

30

–

35

–

tCP

CAS

precharge time (fast page)

10

–

10

–

tPCM

Fast page mode RMW cycle

80

–

85

–

tCRW

Page mode CAS pulse width (RMW)

12

–

15

–

Symbol

Parameter

-50

-60

Unit

Notes

Min

Max

Min

Max

tCLZ

CAS to output in Low Z

0

–

0

–

ns

8

tROH

RAS hold time referenced to OE

8–

10

–

ns

tOEA

OE access time

–

13

–

15

ns

tOED

OE to data delay

13

–

15

–

ns

tOEZ

Output buffer turnoff delay from OE

0130

15

ns

8

tOEH

OE command hold time

10

–

10

–

ns

tOLZ

OE to output in Low Z

0

–

0

–

ns

tOFF

Output buffer turn-off time

0

13

0

15

ns

8,10

Std Symbol

Parameter

-50

-60

Unit

Notes

Min

Max

Min

Max

tRASS

RAS

pulse width (CBR self refresh)

100

-

100

-

µs

15

tRPS

RAS

precharge time (CBR self refresh)

90

-

105

-

ns

tCHS

CAS

hold time (CBR self refresh)

8

-

10

-

nx

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