3DD13002B-TO-92 datasheet(1/1 Pages) JIANGSU

Part #	3DD13002B-TO-92

Description	TRANSISTOR (NPN)

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Manufacturer	JIANGSU [Jiangsu Changjiang Electronics Technology Co., Ltd]

Direct Link	http://www.cj-elec.com/en/

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-92 Plastic-Encapsulate Transistors

3DD13002/ 3DD13002B

TRANSISTOR (NPN)

FEATURE

Power dissipation

PCM:

900

mW (Tamb=25

℃)

Collector current

ICM:

3DD13002:

1

A

3DD13002B:

0.8

A

Collector-base voltage

V(BR)CBO:

600

V

Operating and storage junction temperature range

TJ, Tstg: -55

℃ to +150℃

ELECTRICAL CHARACTERISTICS (Tamb=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

Ic=100

µA, IE=0

600

V

Collector-emitter breakdown voltage

V(BR)CEO

Ic= 1mA, IB=0

400

V

Emitter-base breakdown voltage

V(BR)EBO

IE= 100µA, IC=0

6

V

Collector cut-off current

ICBO

VCB= 600V, IE=0

100

µA

Emitter cut-off current

IEBO

VEB= 6V, IC=0

100

µA

hFE(1)

VCE= 10V, IC= 200 mA

9

40

hFE(2)

VCE= 10V, IC= 10 mA

6

Collector-emitter saturation voltage

VCE(sat)

IC=200mA, IB= 40 mA

0.5

V

Base-emitter saturation voltage

VBE(sat)

IC=200mA, IB=40 mA

1.1

V

Transition frequency

fT

VCE=10V, Ic=100mA

f =1MHz

5

MHz

Fall time

tf

0.5

µs

Storage time

ts

IC=1A, IB1=-IB2=0.2A

VCC=100V

2.5

µs

CLASSIFICATION OF hFE(1)

Range

9-15

15-20

20-25

25-30

30-35

35-40

1 2 3

TO-92

1. EMITTER

2. COLLECTOR

3. BASE

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3DD13002B-TO-92 Datasheet(PDF) 1 Page - Jiangsu Changjiang Electronics Technology Co., Ltd

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