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TPT5610 Datasheet(PDF) 1 Page - Jiangsu Changjiang Electronics Technology Co., Ltd

Part # TPT5610
Description  TRANSISTOR (PNP)
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Manufacturer  JIANGSU [Jiangsu Changjiang Electronics Technology Co., Ltd]
Direct Link  http://www.cj-elec.com/en/
Logo JIANGSU - Jiangsu Changjiang Electronics Technology Co., Ltd

TPT5610 Datasheet(HTML) 1 Page - Jiangsu Changjiang Electronics Technology Co., Ltd

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92L Plastic-Encapsulate Transistors
TPT5610 TRANSISTOR (PNP)
FEATURES
Power dissipation
PCM:
1
W (Tamb=25
℃)
Collector current
ICM:
-1
A
Collector-base voltage
V(BR)CBO:
-25
V
Operating and storage junction temperature range
TJ, Tstg: -55
℃ to +150℃
ELECTRICAL
CHARACTERISTICS (Tamb=25
℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
Ic=-
10µA, IE=0
-25
V
Collector-emitter breakdown voltage
V(BR)CEO
Ic=-
1mA, IB=0
-20
V
Emitter-base breakdown voltage
V(BR)EBO
IE=-10µA, IC=0
-5
V
Collector cut-off current
ICBO
VCB=-20V, IE=0
-1
µA
Emitter cut-off current
IEBO
VEB=-5V, IC=0
-1
µA
DC current gain
hFE
VCE=-2V, IC=-500mA
60
240
Collector-emitter saturation voltage
VCE(sat)
IC=-800mA, IB=-80mA
-0.5
V
Base-emitter voltage
VBE
VCE=-2V, IC=-500mA
-1
V
Transition frequency
fT
VCE=-2V, IC=-500mA
350
MHz
Collector output capacitance
Cob
VCB=-10V, IE=0, f=1MHz
38
pF
CLASSIFICATION OF
hFE
Rank
A
B
C
Range
60-120
85-170
120-240
1 2 3
TO-92L
1.
EMITTER
2.
COLLECTOR
3.
BASE


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