S9016LT1 datasheet(1/1 Pages) JIANGSU

Part #	S9016LT1

Description	TRANSISTOR (NPN)

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Manufacturer	JIANGSU [Jiangsu Changjiang Electronics Technology Co., Ltd]

Direct Link	http://www.cj-elec.com/en/

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JIANGSU CHANGJIANG ELECTRONICS INDUSTIAL CO., LTD

SOT-23 Plastic-Encapsulate Transistors

S9016LT1

TRANSISTOR (NPN)

FEATURES

Power dissipation

PCM:

200

mW (Tamb=25

℃)

Collector current

ICM:

0.025

A

Collector-base voltage

V(BR)CBO:

30

V

Operating and storage junction temperature range

TJ, Tstg: -55

℃ to +150℃

ELECTRICAL

CHARACTERISTICS (Tamb=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

Ic= 100

µA, IE=0

30

V

Collector-emitter breakdown voltage

V(BR)CEO

Ic= 0.1mA, IB=0

20

V

Emitter-base breakdown voltage

V(BR)EBO

IE=100µA, IC=0

5

V

Collector cut-off current

ICBO

VCB=30V, IE=0

0.1

µA

Emitter cut-off current

IEBO

VEB= 3V, IC=0

0.1

µA

DC current gain

HFE(1)

VCE=5V, IC= 1mA

70

200

Collector-emitter saturation voltage

VCE(sat)

IC=10mA, IB= 1mA

0.3

V

Transition frequency

fT

VCE=5V, IC= 1mA

f=100MHz

300

MHz

DEVICE MARKING

S9016LT1= Y6

Unit: mm

SOT-23

1. BASE

2. EMITTER

3. COLLECTOR

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