KTC4075-SOT-323 datasheet(1/3 Pages) JIANGSU

Part #	KTC4075-SOT-323

Description	TRANSISTOR (NPN)

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Manufacturer	JIANGSU [Jiangsu Changjiang Electronics Technology Co., Ltd]

Direct Link	http://www.cj-elec.com/en/

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

SOT-323 Plastic-Encapsulate Transistors

KTC4075

TRANSISTOR (NPN)

FEATURES

Excellent hFE linearity

High hFE

Low Noise

Complementary to KTA2014

MAXIMUM RATINGS* TA=25

℃ unless otherwise noted

Symbol

Parameter

Value

Units

VCBO

Collector-Base Voltage

60

V

VCEO

Collector-Emitter Voltage

50

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current -Continuous

150

mA

PD

Total Device Dissipation

100

mW

TJ, Tstg

Junction and Storage Temperature

-55-125

℃

ELECTRICAL

CHARACTERISTICS (Tamb=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

IC = 100µA, IE=0

60

V

Collector-emitter breakdown voltage

V(BR)CEO

IC = 1mA, IB=0

50

V

Emitter-base breakdown voltage

V(BR)EBO

IE= 100µA, IC=0

5

V

Collector cut-off current

ICBO

VCB=60V, IE=0

0.1

µA

Emitter cut-off current

IEBO

VEB=5V, IC=0

0.1

µA

DC current gain

hFE

VCE= 6V, IC=2mA

70

700

Collector-emitter saturation voltage

VCEsat

IC=100mA, IB= 10mA

0.25

V

Transition frequency

fT

VCE=10V, IC= 1mA

80

MHz

Collector output capacitance

Cob

VCE=10V, IE=0, f=1MHz

3.5

dB

Noise figure

NF

VCE=6V,IE=0.1mA, f=1KHz,RG=10KΩ

10

dB

CLASSIFICATION OF hFE

Rank

O

Y

GR

BL

Range

70~140

120~240

200~400

350~700

Marking

LO

LY

LGR

LBL

SOT-323

1. BASE

2. EMITTER

3. COLLECTOR

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KTC4075-SOT-323 Datasheet(PDF) 1 Page - Jiangsu Changjiang Electronics Technology Co., Ltd

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