1

Schottky Barrier Diodes (SBD)

MA2C700, MA2C700A

Silicon epitaxial planar type

For ordinary wave detection

For super high speed switching

I Features

• Low forward rise voltage (V

efficiency (

η)

• Small temperature coefficient of forward characteristic

• Extremely low reverse current I

R

• DO-34(DHD) envelope, allowing to insert to a 5 mm pitch hole

I Absolute Maximum Ratings T

a

= 25°C

Unit : mm

Parameter

Symbol

Rating

Unit

Reverse voltage

MA2C700

15

V

(DC)

MA2C700A

30

Peak reverse

MA2C700

15

V

voltage

MA2C700A

30

Peak forward current

150

mA

Forward current (DC)

30

mA

Junction temperature

125

°C

Storage temperature

−55 to +125

°C

1 : Cathode

2 : Anode

JEDEC : DO-34

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Reverse current (DC)

MA2C700

100

nA

MA2C700A

150

Forward voltage (DC)

0.4

V

1

V

Terminal capacitance

1.3

pF

1

ns

Detection efficiency

η

60

%

Ω, C

I Electrical Characteristics T

Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a

human body and the leakage of current from the operating equipment

 

2. Rated input/output frequency: 2 000 MHz

Bias Application Unit N-50BU

90%

Pulse Generator

(PG-10N)

R

W.F.Analyzer

(SAS-8130)

R

t

t

δ = 0.05

I

I

R

10%

Input Pulse

Output Pulse

I

t

r

t

p

t

rr

V

R

I

F

t

t

A

1st Band

2nd Band

φ 0.45 max.

φ 1.75 max.

COLORED BAND

INDICATES

CATHODE

2

1

Type No.

MA2C700 MA2C700A

Color

1st Band

Silver

Silver

2nd Band



Green

I Cathode Indication