MP4T645 Series

Specification Subject to Change Without Notice

M-Pulse Microwave____________________________________________________________________________________

2

576 Charcot Avemue, San Jose, California 95131

Tel (408) 432-1480

Fax (408)) 432-3440

Absolute Maximum Ratings

MP4T645 Series

Collector-Base Voltage

25 V

Collector-Emitter Voltage

12 V

Emitter-Base Voltage

1.5 V

Collector Current

65 mA

Junction Operating Temperature

200

°C

Storage Temperature

Chip or Ceramic Packages

-65

°C to +200°C

Plastic Packages

-65

°C to +125°C

Total Power Dissipation at 25

°C

Derate Linearly to:

+150

°C Chip

400 mW

+125

°C Plastic Package (SOT-23)

200 mW

+150

°C Ceramic Package (Micro-X)

300 mW

Electrical Specifications @ 25

°C

MP4T645 Series

Parameter of Test

Condition

Symbol

Units

MP4T64500

Chip

MP4T64535

SOT-23

MP4T64533

Micro-X

Gain Bandwidth Product

GHz

10 typ

8 typ

9 typ

Insertion Power Gain

2

dB

f = 1 GHz

18 typ

16 typ

17 typ

f = 2 GHz

11 min

10 min

10 min

f = 4 GHz

7 typ

6.5 typ

Noise Figure

NF

dB

f = 1 GHz

1.7 max

1.7 max

1.7 max

f = 2 GHz

2.0 typ

2.5 typ

2.0 typ

Unilateral Gain

GTU (max)

dB

f = 1 GHz

18 typ

16 typ

17 typ

f = 2 GHz

11 typ

10 typ

11 typ

Maximum Available Gain

MAG

dB

f = 2 GHz

14 typ

13 typ

14 typ

f = 4 GHz

12 typ

10 typ

11.5 typ

Power Out at 1 dB

dBm

Compression

f = 1 GHz

16 typ

16 typ

16 typ

f = 4 GHz

11 typ

11 typ

11 typ

Note:

The electrical characteristics of the MP4T64539 (SOT-143) are very similar to those of the MP4T64533 (SOT-23).