MP4T636539 datasheet(2/8 Pages) MPLUSE

Part #	MP4T636539

Description	Low OperatingVoltage, High fT Bipolar Microwave Transistors

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Manufacturer	MPLUSE [M-pulse Microwave Inc.]

Direct Link	http://www.mpulsemw.com

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Low Operating Voltage, High fT Bipolar Microwave Transistors

MP4T6365 Series

V2.00

Specification Subject to Change Without Notice

M-Pulse Microwave____________________________________________________________________________________

2

576 Charcot Avemue, San Jose, California 95131

Tel (408) 432-1480

Fax (408)) 432-3440

Maximum Ratings (TA = 25°C)

MP4T6365 Series

Collector-Base Voltage

VCBO

10 V

Collector-Emitter Voltage

VCE

6 V

Emitter-Base Voltage

VEB

1.5 V

Collector Current

IC

65 mA

Junction Operating Temperature

Tj

200

°C

Storage Temperature

Chip or Ceramic Packages

TS

-65

°C to +200°C

Plastic Packages

-65

°C to +125°C

Power Dissipation

Package Type

Maximum Dissipation

Maximum Operating

@ 25

°C

Temperature

Chip (MP4T636500)

400 mW

175

°C

SOT-23 (MP4T636533)

200 mW

125

°C

Micro-X Package (MP4T636535)

300 mW

150

°C

SOT-143 (MP4T636539)

225 mW

125

°C

Electrical Specifications @ 25

°C

MP4T6365 Series

Parameter of Test

Condition

Symbol

Units

MP4T636500

Chip

MP4T636535

Micro-X

MP4T636539

SOT-143

MP4T636533

SOT-23

Gain Bandwidth Product

VCE = 3 V

fT

GHz

10 typ

IC = 20 mA

Insertion Power Gain

VCE = 3 V

|S21E|

2

dB

IC = 10 mA

f = 1 GHz

14 typ

13 typ

f = 2 GHz

7.0 min

Noise Figure

VCE = 3 V

NF

dB

IC = 5 mA

f = 1 GHz

1.3 typ

1.4 typ

f = 2 GHz

1.6 typ

1.7 typ

Unilateral Gain

VCE = 3 V

GTU (max)

dB

IC = 5 mA

f = 1 GHz

15 typ

14 typ

f = 2 GHz

10 typ

9 typ

Maximum Available Gain

VCE = 3 V

MAG

dB

IC = 20 mA

f = 1 GHz

16 typ

f = 2 GHz

12 typ

11 typ

10 typ

Output Power at 1 dB

VCE = 3 V

P1dB

dBm

Compression

IC = 20 mA

f = 2 GHz

16 typ

17 typ

16 typ

f = 4 GHz

12 typ

13 typ

12 typ

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MP4T636539 Datasheet(PDF) 2 Page - M-pulse Microwave Inc.

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