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MA2C856 Datasheet(PDF) 1 Page - Panasonic Semiconductor

Part # MA2C856
Description  Band Switching Diodes
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Manufacturer  PANASONIC [Panasonic Semiconductor]
Direct Link  http://www.panasonic.com/industrial/
Logo PANASONIC - Panasonic Semiconductor

MA2C856 Datasheet(HTML) 1 Page - Panasonic Semiconductor

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Band Switching Diodes
Unit : mm
MA2C856
Silicon epitaxial planar type
For band switching
I Features
• Extra-small DHD envelope, allowing to insert into a 5 mm pitch
hole
• Less voltage dependence of the terminal capacitance C
t
• Low forward dynamic resistance r
f
• Optimum for a band switching of a tuner
I Absolute Maximum Ratings T
a = 25°C
Parameter
Symbol
Rating
Unit
Reverse voltage (DC)
VR
35
V
Forward current (DC)
IF
100
mA
Operating ambient temperature
Topr
−25 to +85
°C
Storage temperature
Tstg
−55 to +100
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Reverse current (DC)*
IR
VR = 33 V
100
nA
Forward voltage (DC)
VF
IF = 100 mA
1
V
Terminal capacitance
Ct
VR = 15 V, f = 1 MHz
2
pF
Forward dynamic resistance
rf
IF = 3 mA, f = 100 MHz
0.85
I Electrical Characteristics T
a = 25
°C
Note) 1
.Rated input/output frequency: 100 MHz
2
.* : Measurement with the beam shielded
1 : Cathode
2 : Anode
JEDEC : DO-34
Type No.
MA2C856
Color
Yellow
I Cathode Indication
φ 0.45 max.
φ 1.75 max.
COLORED BAND
INDICATES
CATHODE
2
1


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