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MA2C856 Datasheet(PDF) 1 Page - Panasonic Semiconductor |
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MA2C856 Datasheet(HTML) 1 Page - Panasonic Semiconductor |
1 / 2 page 1 Band Switching Diodes Unit : mm MA2C856 Silicon epitaxial planar type For band switching I Features • Extra-small DHD envelope, allowing to insert into a 5 mm pitch hole • Less voltage dependence of the terminal capacitance C t • Low forward dynamic resistance r f • Optimum for a band switching of a tuner I Absolute Maximum Ratings T a = 25°C Parameter Symbol Rating Unit Reverse voltage (DC) VR 35 V Forward current (DC) IF 100 mA Operating ambient temperature Topr −25 to +85 °C Storage temperature Tstg −55 to +100 °C Parameter Symbol Conditions Min Typ Max Unit Reverse current (DC)* IR VR = 33 V 100 nA Forward voltage (DC) VF IF = 100 mA 1 V Terminal capacitance Ct VR = 15 V, f = 1 MHz 2 pF Forward dynamic resistance rf IF = 3 mA, f = 100 MHz 0.85 Ω I Electrical Characteristics T a = 25 °C Note) 1 .Rated input/output frequency: 100 MHz 2 .* : Measurement with the beam shielded 1 : Cathode 2 : Anode JEDEC : DO-34 Type No. MA2C856 Color Yellow I Cathode Indication φ 0.45 max. φ 1.75 max. COLORED BAND INDICATES CATHODE 2 1 |
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