Silicon Bipolar MMIC Cascadable Amplifier

MP4TD0900

Specification Subject to Change Without Notice

M-Pulse Microwave

__________________________________________________________________________________

2

PH (408) 432-1480

FX (408) 432-3440

Parameter

Absolute Maximum

Device Current

80 mA

750 mW

RF Input Power

+20 dBm

Junction Temperature

200

°C

Storage Temperature

-65

°C to +200°C

Thermal Resistance:

1. Exceeding these limits may cause permanent damage.

2. Mounting Surface Temperature (TMS)= 25 °C.

3. Derate at 14.3 mW/

°C for TMS > 147°C

Typical Bias Configuration

IN

OUT

1

2

3

4

RFC (Optional)

C (DC Block)

C (DC Block)

Rbias

Vcc >10 V

Vd = 7.8 V

Id =

Vcc - Vd

Rbias

MP4TD0900

Typical Performance Curves @ Id = 35 mA, TA = +25°C (unless otherwise noted)

(Performance Required 45 pF Feedback Capacitor)

DEVICE CURRENT vs DEVICE VOLTAGE

0

10

20

30

40

50

60

0

246

8

10

Vd, D EVICE VO LTAG E (V)

POWER GAIN vs CURRENT

4

5

6

7

8

9

10

20

30

40

50

Id, DEVICE CU RR ENT (mA)

f= 0.1 G H z

f= 2.0 GHz

RETURN LOSS vs FREQUENCY

-25

-20

-15

-10

-5

0

0.1

1

10

FREQ UENCY (G H z)

Input

Output

vs FREQUENCY

0

2

4

6

8

10

12

14

16

0.1

1

10

FREQ UENCY (G H z)

Id=25mA

Id= 35mA

Id= 45mA