Specification Subject to Change Without Notice

M-Pulse Microwave

__________________________________________________________________________________

1

PH (408) 432-1480

FX (408) 432-3440

M-Pulse Microwave

Silicon Bipolar MMIC

Cascadable Amplifier

MP4TD1100

Features

• High Dynamic Range Cascadable

50

Ω/75Ω Gain Block

• 3dB Bandwidth: 50 MHz to 1.0 GHz

• 11 dB Typical Gain @ 0.5 GHz

• 3.5 dB Typical Noise Figure @ 1.0 GHz

Description

M-Pulse's MP4TD1100 is a high performance silicon

bipolar MMIC chip. The MP4TD1100 is designed for

use in 50

Ω or 75Ω systems where a high dynamic range

gain block is required.

Typical applications include

narrow and wide band IF and RF amplifiers in industrial

and military applications.

The MP4TD1100 is fabricated using a 10 GHz fT silicon

bipolar technology that features gold metalization and IC

passivation for increased performance and reliability.

TYPICAL POWER GAIN vs FREQUENCY

0

2

4

6

8

10

12

14

0.1

1

10

FREQUENCY (GHz)

Id=60mA

Chip Outline Drawing1,2,3,4

RF Input

Feedback Capacitor

Ground

Optional RF Output & +5.5 Volts

375

(14.8 mil)

µ

375

(14.8 mil)

µ

Notes: (unless otherwise specified)

1. Chip Thickness is 120

µm; 4.8 mils

2. Bond Pads are 40

µm; 1.6 mils typical in diameter

3. Output Contact &

+DC Voltage Is Normally Made On

Backside Of Chip At Die Attach

4. Tolerance:

µm .xx = ±.13; mil .x = ±.5

Ordering Information

Model No.

Type of Carrier

MP4TD1100G

GEL PACK

MP4TD1100W

Waffle Pack

Symbol

Parameters

Test Conditions

Units

Min.

Typ.

Max.

Gp

Power Gain (

S212)

f = 0.1 GHz

dB

-

12.5

-

∆Gp

Gain Flatness

f = 0.1 to 0.7 GHz

dB

-

+ 1.2

-

3 dB Bandwidth

ref 50 MHz Gain

GHz

-

1.0

-

Input SWR

f = 0.1 to 2.0 GHz

-

-

1.9

-

Output SWR

f = 0.1 to 2.0 GHz

-

-

1.9

-

Output Power @ 1dB Gain Compression

f = 0.7 GHz

dBm

-

17.5

-

NF

50

Ω Noise Figure

f = 1.0 GHz

dB

-

4.5

-

Third Order Intercept Point

f = 1.0 GHz

dBm

-

30.0

-

Group Delay

f = 1.0 GHz

ps

-

160

-

Device Voltage

-

V

4.5

5.5

6.5

dV/dT

Device Voltage Temperature Coefficient

-

mV/

°C

-

-8.0

-