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MP42141-509 Datasheet(PDF) 1 Page - M-pulse Microwave Inc. |
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MP42141-509 Datasheet(HTML) 1 Page - M-pulse Microwave Inc. |
1 / 5 page Specification Subject to Change Without Notice M-Pulse Microwave____________________________________________________________________________________ 1 576 Charcot Avemue, San Jose, California 95131 Tel (408) 432-1480 Fax (408)) 432-3440 Silicon Bipolar Low Noise Microwave Transistors MP42141 Features • Low Intrinsic Noise Figure (2.3dB Typical @ 1.0 GHz) • High Power Gain At 1.0 GHz – 18.0 dB Typical • Gold Metalization • Hermetic and Surface Mount Packages Available • Can be Screened to JANTX, JANTXV Equivalent Levels • ION Implanted arsenic Emitter for Consistent Performance Description This NPN Silicon transistor finds applications in low noise and medium power microwave amplifier circuitry. The MP42141 exhibits an excellent noise figure characteristic over the frequency range of .5 to 2 GHz. This transistor also features good high frequency current gain at medium current levels. Applications RF amplifiers and low level oscillators. Case Styles Micro-X |
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