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MP42141-509 Datasheet(PDF) 2 Page - M-pulse Microwave Inc.

Part # MP42141-509
Description  Silicon Bipolar Low Noise Microwave Transistors
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Manufacturer  MPLUSE [M-pulse Microwave Inc.]
Direct Link  http://www.mpulsemw.com
Logo MPLUSE - M-pulse Microwave Inc.

MP42141-509 Datasheet(HTML) 2 Page - M-pulse Microwave Inc.

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Silicon Bipolar High fT Low Noise Microwave Transistors
MP42141 Series
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
2
576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480
Fax (408)) 432-3440
Absolute Maximum Ratings
MP42141 Series
Collector-Base Voltage
VCBO
27 V
Collector-Emitter Voltage
VCEO
20 V
Emitter-Base Voltage
VEBO
1.5 V
Collector Current
IC
50 mA
Junction Operating Temperature
Tj
200
°C
Storage Temperature
Chip or Ceramic Packages
-65
°C to +200°C
Plastic Packages
-65
°C to +125°C
Total Power Dissipation at 25
°C
509 Case Style
400 mW
510 Case Style
700 mW
35 Case Style
700 mW
Electrical Specifications @ 25
°C
MP42141 Series
Parameter of Test
Condition
Symbol
Units
MP4214100
Chip
MP4214135
Micro-X
MP42141-509
TO-72
Gain Bandwidth Product
VCE = 10 volts
fT
GHz
4.1 typ
-----
-----
Fm =1.0 GHz
Ic = 15 mA
Insertion Power Gain
VCE = 15 volts
|S21E|
2
dB
IC = 15 mA
f = 1 GHz
13 typ
13 typ
11 typ
f = 2 GHz
7 typ
7 min
5 typ
Noise Figure
VCE = 10 volts
NF
dB
IC = 5 mA
f = 1 GHz
2.0 typ
2.0 typ
2.3 typ
f = 2 GHz
3.4 typ
3.4 typ
3.6 typ
Unilateral Gain
VCE = 10 volts
GTU (max)
dB
IC = 15 mA
f = 1 GHz
17 typ
17 typ
14 typ
Power Out at 1 dB
VCE = 10 volts
P1dB
dBm
Compression
IC = 10 mA
Z=OPT
f = 1 GHz
N/A
+7 typ
+4 typ


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