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K4F661612E Datasheet(PDF) 9 Page - Samsung semiconductor

Part # K4F661612E
Description  4M x 16bit CMOS Dynamic RAM with Fast Page Mode
Download  35 Pages
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Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

K4F661612E Datasheet(HTML) 9 Page - Samsung semiconductor

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CMOS DRAM
K4F661612E, K4F641612E
Industrial Temperature
tASC , tCAH are referenced to the earlier CAS falling edge.
tCP is specified from the last CAS rising edge in the previous cycle to the first CAS falling edge in the next cycle.
tCWD is referenced to the later CAS falling edge at word read-modify-write cycle.
tCWL is specified from W falling edge to the earlier CAS rising edge.
tCSR is referenced to earlier CAS falling before RAS transition low.
tCHR is referenced to the later CAS rising high after RAS transition low.
tDS is specified for the earlier CAS falling edge and tDH is specified by the later CAS falling edge.
If
tRASS
≥100us, then RAS precharge time must use tRPS instead of tRP.
For RAS -only-Refresh and Burst CAS -before-RAS refresh mode, 4096 cycles(4K/8K) of burst refresh must be executed within
64ms before and after self refresh, in order to meet refresh specification.
For distributed CAS-before-RAS with 15.6us interval, CBR refresh should be executed with in 15.6us immediately before and
after self refresh in order to meet refresh specification.
tCSR
tCHR
RAS
LCAS
UCAS
tDS
tDH
LCAS
UCAS
DQ0 ~ DQ15
Din
21.
20.
19.
15.
14.
13.
18.
17.
16.
22.


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