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K7M163625M Datasheet(PDF) 11 Page - Samsung semiconductor

Part # K7M163625M
Description  512Kx36 & 1Mx18 Flow-Through NtRAM-TM
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Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

K7M163625M Datasheet(HTML) 11 Page - Samsung semiconductor

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512Kx36 & 1Mx18 Flow-Through NtRAMTM
- 11 -
Rev 3.0
February 2001
K7M161825M
K7M163625M
DC ELECTRICAL CHARACTERISTICS(VDD=3.3V+0.165V/-0.165V, TA=0°C to +70°C)
Notes : 1. Reference AC Operating Conditions and Characteristics for input and timing.
2. Data states are all zero.
3. In Case of I/O Pins, the Max. VIH=V DDQ+0.3V.
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
MAX
UNIT NOTES
Input Leakage Current(except ZZ)
IIL
V DD=Max ; VIN=V SS to VDD
-2
+2
µA
Output Leakage Current
IOL
Output Disabled,
-2
+2
µA
Operating Current
ICC
Device Selected, IOUT =0mA,
ZZ
VIL , Cycle Time ≥ tCYC Min
-75
-
340
mA
1,2
-85
-
320
-90
-
300
Standby Current
ISB
Device deselected, IOUT =0mA,
ZZ
VIL, f=Max,
All Inputs
0.2V or ≥ VDD-0.2V
-75
-
90
mA
-85
-
80
-90
-
70
ISB1
Device deselected, IOUT =0mA, ZZ
0.2V, f=0,
All Inputs=fixed (V DD-0.2V or 0.2V)
-
30
mA
ISB2
Device deselected, IOUT =0mA, ZZ
≥VDD-0.2V,
f=Max, All Inputs
VIL or ≥VIH
-
30
mA
Output Low Voltage(3.3V I/O)
VOL
IOL=8.0mA
-
0.4
V
Output High Voltage(3.3V I/O)
V OH
IOH=-4.0mA
2.4
-
V
Output Low Voltage(2.5V I/O)
VOL
IOL=1.0mA
-
0.4
V
Output High Voltage(2.5V I/O)
V OH
IOH=-1.0mA
2.0
-
V
Input Low Voltage(3.3V I/O)
VIL
-0.3*
0.8
V
Input High Voltage(3.3V I/O)
VIH
2.0
VDD +0.5**
V
3
Input Low Voltage(2.5V I/O)
VIL
-0.3*
0.7
V
Input High Voltage(2.5V I/O)
VIH
1.7
VDD +0.5**
V
3
VSS
VIH
VSS-1.0V
20% tCYC (MIN)
(VDD=3.3V+0.165V/-0.165V,VDDQ=3.3V+0.165/-0.165V or VDD=3.3V+0.165V/-0.165V,VDDQ=2.5V+0.4V/-0.125V, TA=0to70
°C)
TEST CONDITIONS
PARAMETER
VALUE
Input Pulse Level(for 3.3V I/O)
0 to 3.0V
Input Pulse Level(for 2.5V I/O)
0 to 2.5V
Input Rise and Fall Time(Measured at 20% to 80% for 3.3V I/O)
1.0V/ns
Input Rise and Fall Time(Measured at 20% to 80% for 2.5V I/O)
1.0V/ns
Input and Output Timing Reference Levels for 3.3V I/O
1.5V
Input and Output Timing Reference Levels for 2.5V I/O
VDDQ/2
Output Load
See Fig. 1


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