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MA729 Datasheet(PDF) 1 Page - Panasonic Semiconductor |
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MA729 Datasheet(HTML) 1 Page - Panasonic Semiconductor |
1 / 2 page 1 Schottky Barrier Diodes (SBD) MA2J729 Silicon epitaxial planar type For super-high speed switching circuit For small current rectification I Features • Sealed in the S-mini (2-pin) mold and super small type • Allowing to rectify under (I F(AV) = 200 mA) condition • Allowing high-density mounting I Absolute Maximum Ratings T a = 25°C Unit : mm Parameter Symbol Rating Unit Reverse voltage (DC) VR 30 V Repetitive peak reverse voltage VRRM 30 V Peak forward current IFM 300 mA Average forward current IF(AV) 200 mA Non-repetitive peak forward IFSM 1A surge current* Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 1 : Anode 2 : Cathode S-Mini Type Package (2-pin) Parameter Symbol Conditions Min Typ Max Unit Reverse current (DC) IR VR = 30 V 50 µA Forward voltage (DC) VF IF = 200 mA 0.55 V Terminal capacitance Ct VR = 0 V, f = 1 MHz 30 pF Reverse recovery time* trr IF = IR = 100 mA 3.0 ns Irr = 10 mA, RL = 100 Ω I Electrical Characteristics T a = 25°C Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment 2. Rated input/output frequency: 1 000 MHz 3. * : trr measuring instrument 1 2 KA 2.5 ± 0.2 1.7 ± 0.1 0.4 ± 0.1 0.4 ± 0.1 Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive) Marking Symbol: 2B Bias Application Unit N-50BU 90% Pulse Generator (PG-10N) R s = 50 Ω W.F.Analyzer (SAS-8130) R i = 50 Ω t p = 2 µs t r = 0.35 ns δ = 0.05 I F = 100 mA I R = 100 mA R L = 100 Ω 10% Input Pulse Output Pulse I rr = 10 mA t r t p t rr V R I F t t A |
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