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IRH4230 Datasheet(PDF) 2 Page - International Rectifier |
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IRH4230 Datasheet(HTML) 2 Page - International Rectifier |
2 / 12 page 2 www.irf.com IRH7230 IRH7230 IRH7230 IRH7230 IRH7230 Pre-Irradiation Pre-Irradiation Pre-Irradiation Pre-Irradiation Pre-Irradiation Note: Corresponding Spice and Saber models are available on the G&S Website. Note: Corresponding Spice and Saber models are available on the G&S Website. Note: Corresponding Spice and Saber models are available on the G&S Website. Note: Corresponding Spice and Saber models are available on the G&S Website. Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page Source-Drain Diode Ratings and Characteristics Source-Drain Diode Ratings and Characteristics Source-Drain Diode Ratings and Characteristics Source-Drain Diode Ratings and Characteristics Source-Drain Diode Ratings and Characteristics Parameter Parameter Parameter Parameter Parameter Min Min Min Min Min Typ Typ Typ Typ Typ Max Max Max Max Max Units Units Units Units Units Test Conditions Test Conditions Test Conditions Test Conditions Test Conditions IS Continuous Source Current (Body Diode) 9.0 ISM Pulse Source Current (Body Diode) ➀ 36 VSD Diode Forward Voltage 1.6 V Tj = 25°C, IS = 9.0A, VGS = 0V ➃ trr Reverse Recovery Time 460 nS Tj = 25°C, IF = 9.0A, di/dt ≤ 100A/µs QRR Reverse Recovery Charge 5.0 µC VDD ≤ 50V ➃ ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. A Thermal Resistance Thermal Resistance Thermal Resistance Thermal Resistance Thermal Resistance Parameter Parameter Parameter Parameter Parameter Min Min Min Min Min Typ Typ Typ Typ Typ Max Max Max Max Max Units Units Units Units Units Test Conditions Test Conditions Test Conditions Test Conditions Test Conditions RthJC Junction-to-Case 1.67 RthJA Junction-to-Ambient 30 °C/W Typical socket mount RthCS Case-to-Sink 0.12 Electrical Characteristics Electrical Characteristics Electrical Characteristics Electrical Characteristics Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) @ Tj = 25°C (Unless Otherwise Specified) @ Tj = 25°C (Unless Otherwise Specified) @ Tj = 25°C (Unless Otherwise Specified) @ Tj = 25°C (Unless Otherwise Specified) Parameter Parameter Parameter Parameter Parameter Min Min Min Min Min Typ Typ Typ Typ Typ Max Max Max Max Max Units Units Units Units Units Test Conditions Test Conditions Test Conditions Test Conditions Test Conditions BVDSS Drain-to-Source Breakdown Voltage 200 V VGS = 0V, ID = 1.0mA ∆BVDSS/∆TJ Temperature Coefficient of Breakdown 0.27 V/°C Reference to 25°C, ID = 1.0mA Voltage RDS(on) Static Drain-to-Source On-State 0.40 Ω VGS = 12V, ID =6.0A Resistance 0.49 VGS = 12V, ID = 9.0A VGS(th) Gate Threshold Voltage 2.0 4.0 V VDS = VGS, ID = 1.0mA gfs Forward Transconductance 3.3 S ( )VDS > 15V, IDS = 6.0A ➃ IDSS Zero Gate Voltage Drain Current 25 VDS= 160V ,VGS=0V 250 VDS = 160V, VGS = 0V, TJ = 125°C IGSS Gate-to-Source Leakage Forward 100 VGS = 20V IGSS Gate-to-Source Leakage Reverse -100 VGS = -20V Qg Total Gate Charge 50 VGS =12V, ID =9.0A Qgs Gate-to-Source Charge 10 nC VDS = 100V Qgd Gate-to-Drain (Miller) Charge 20 td(on) Turn-On Delay Time 35 VDD = 100V, ID =9.0A tr Rise Time 80 VGS =12V, RG = 7.5Ω td(off) Turn-Off Delay Time 60 tf Fall Time 46 LS + LD Total Inductance 10 Ciss Input Capacitance 1100 VGS = 0V, VDS = 25V Coss Output Capacitance 250 pF f = 1.0MHz Crss Reverse Transfer Capacitance 65 nA ➃ Measured from Drain lead (6mm /0.25in. from package) to Source lead (6mm /25in. from package) with Source wires internally bonded from Source Pin to Drain Pad ns µA nH |
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Similar Description - IRH4230 |
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