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TMS418160-70DZ Datasheet(PDF) 1 Page - Texas Instruments |
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TMS418160-70DZ Datasheet(HTML) 1 Page - Texas Instruments |
1 / 28 page TMS416160, TMS416160P, TMS418160, TMS418160P TMS426160, TMS426160P, TMS428160, TMS428160P 1048576-WORD BY 16-BIT HIGH-SPEED DRAMS SMKS160C – MAY 1995 – REVISED NOVEMBER 1995 1 POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443 D Organization...1048576 × 16 D Single Power Supply (5 V or 3.3 V) D Performance Ranges: ACCESS ACCESS ACCESS READ OR TIME TIME TIME WRITE tRAC tCAC tAA CYCLE MAX MAX MAX MIN ’4xx160/P-60 60 ns 15 ns 30 ns 110 ns ’4xx160/P-70 70 ns 18 ns 35 ns 130 ns ’4xx160/P-80 80 ns 20 ns 40 ns 150 ns D Enhanced Page-Mode Operation With CAS-Before-RAS ( CBR ) Refresh D Long Refresh Period and Self-Refresh Option ( TMS4xx160P) D 3-State Unlatched Output D Low Power Dissipation D High-Reliability Plastic 42-Lead (DZ Suffix) 400-Mil-Wide Surface-Mount (SOJ) Package and 44/50-Lead (DGE Suffix) Surface-Mount Thin Small-Outline Package ( TSOP) D Operating Free-Air Temperature Range 0 °C to 70°C D Fabricated Using the Texas Instruments Enhanced Performance Implanted CMOS (EPIC ™) Technology AVAILABLE OPTIONS DEVICE POWER SUPPLY SELF REFRESH, BATTERY BACKUP REFRESH CYCLES TMS416160 TMS416160P TMS418160 TMS418160P TMS426160 TMS426160P TMS428160 TMS428160P 5 V 5 V 5 V 5 V 3.3 V 3.3 V 3.3 V 3.3 V — Yes — Yes — Yes — Yes 4096 in 64 ms 4096 in 128 ms 1024 in 16 ms 1024 in 128 ms 4096 in 64 ms 4096 in 128 ms 1024 in 16 ms 1024 in 128 ms description The TMS4xx160 series is a set of high-speed, 16 777 216-bit dynamic random-access memo- ries (DRAMs) organized as 1 048 576 words of 16 bits each. The TMS4xx160P series is a similar set of high-speed, low-power, self-refresh, 16 777 216-bit DRAMs organized as 1 048 576 words of 16 bits each. Both sets employ state-of-the-art enhanced performance implanted CMOS (EPIC ™) technology for high performance, reliability, and low power at low cost. Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. PIN NOMENCLATURE A0 – A11 Address Inputs DQ0 – DQ15 Data In / Data Out LCAS Lower Column-Address Strobe UCAS Upper Column-Address Strobe NC No Internal Connection OE Output Enable RAS Row-Address Strobe VCC 5-V or 3.3-V Supply‡ VSS Ground W Write Enable VSS DQ15 DQ14 DQ13 DQ12 VSS DQ11 DQ10 DQ9 DQ8 NC 1 2 3 4 5 6 7 8 9 10 11 50 49 48 47 46 45 44 43 42 41 40 VCC DQ0 DQ1 DQ2 DQ3 VCC DQ4 DQ5 DQ6 DQ7 NC NC LCAS UCAS OE A9 A8 A7 A6 A5 A4 VSS DGE PACKAGE ( TOP VIEW ) 15 16 17 18 19 20 21 22 23 24 25 36 35 34 33 32 31 30 29 28 27 26 NC NC W RAS A11† A10† A0 A1 A2 A3 VCC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 VCC DQ0 DQ1 DQ2 DQ3 VCC DQ4 DQ5 DQ6 DQ7 NC NC W RAS A11† A10† A0 A1 A2 A3 VCC VSS DQ15 DQ14 DQ13 DQ12 VSS DQ11 DQ10 DQ9 DQ8 NC LCAS UCAS OE A9 A8 A7 A6 A5 A4 VSS DZ PACKAGE ( TOP VIEW ) ‡ See Available Options Table. † A10 and A11 are NC for TMS4x8160 and TMS4x8160P. EPIC is a trademark of Texas Instruments Incorporated. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 1995, Texas Instruments Incorporated |
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