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AME8831AEEV330Z Datasheet(PDF) 4 Page - Asahi Kasei Microsystems |
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AME8831AEEV330Z Datasheet(HTML) 4 Page - Asahi Kasei Microsystems |
4 / 13 page AME, Inc. 4 150mA Hi-PSRR, Low-Quiescent LDO with In-Rush Current Control For USB Application AME8831 n Absolute Maximum Ratings n Recommended Operating Conditions Caution: Stress above the listed absolute maximum rating may cause permanent damage to the device HBM C: 4000V+ Parameter Maximum Unit Input Voltage 6 V Output Current PD / (VIN - VOUT) mA Output Voltage GND-0.3 to VIN+0.3 V ESD Classification C* Parameter Symbol Rating Unit Ambient Temperature Range TA - 40 to +85 Junction Temperature Range TJ - 40 to +125 Storage Temperature Range TSTG -65 to +150 oC * Measure θ JC on center of molding compound if IC has no tab. ** MIL-STD-202G 210F Parameter Package Die Attach Symbol Maximum Unit Thermal Resistance* (Junction to Case) θ JC 81 Thermal Resistance (Junction to Ambient) θ JA 260 Internl Power Dissipation PD 400 mW 150 oC 350 oC Conductive Epoxy Maximum Junction Temperature Solder Iron (10 Sec)** oC / W SOT-25 n Thermal Information |
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