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2SB772S-SOT89 Datasheet(PDF) 3 Page - Unisonic Technologies |
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2SB772S-SOT89 Datasheet(HTML) 3 Page - Unisonic Technologies |
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3 / 4 page  2SB772S PNP EPITAXIAL SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 3 www.unisonic.com.tw QW-R208-002.B ■ TYPICAL CHARACTERICS Fig.1 Static characteristics -Collector-Emitter voltage (V) 04 8 12 16 20 0 0.4 0.8 1.2 1.6 Case Temperature, Tc ( ℃) -IB=1mA -IB=2mA -IB=3mA -IB=4mA -IB=5mA -IB=6mA -IB=7mA -IB=8mA -IB=9mA Fig.2 Derating curve of safe operating areas 200 150 100 50 0 -50 0 50 100 150 S/b lim ited Case Temperature, Tc ( ℃) 200 150 100 50 0 -50 Fig.3 Power Derating 0 4 8 12 Fig.4 Collector Output capacitance -Collector-Base Voltage(v) 10 0 10 -1 10 -2 10 -3 10 1 10 2 10 3 10 0 IE=0 f=1MHz Fig.5 Current gain - bandwidth product 10 1 10 2 10 3 10 0 VCE=5V Collector-Emitter Voltage Fig.6 Safe Operating Area Ic(max),DC Ic(max),Pulse 10 mS 1m S Collector current, Ic (A) 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 10 1 10 0 10 1 10 2 IB=8mA IB=8mA |
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