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2SB772S-AB3-R Datasheet(PDF) 2 Page - Unisonic Technologies |
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2SB772S-AB3-R Datasheet(HTML) 2 Page - Unisonic Technologies |
2 / 4 page 2SB772S PNP EPITAXIAL SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 2 www.unisonic.com.tw QW-R208-002.B ABSOLUATE MAXIUM RATINGS (Ta = 25℃) PARAMETER SYMBOL RATINGS UNIT Collector -Base Voltage VCBO -40 V Collector -Emitter Voltage VCEO -30 V Emitter -Base Voltage VEBO -5 V Peak Collector Current ICM -7 A DC Collector Current IC -3 A Base Current IB -0.6 A Power Dissipation PD 1.0 W Junction Temperature TJ +150 ℃ Storage Temperature TSTG -40 ~ +150 ℃ ELECTRICAL CHARACTERISTICS (Ta= 25℃, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector Cut-Off Current ICBO VCB=-30V,IE=0 -1000 nA Emitter Cut-Off Current IEBO VEB=-3V,Ic=0 -1000 nA DC Current Gain(Note 1) hFE1 hFE2 VCE=-2V,Ic=-20mA VCE=-2V,Ic=-1A 30 100 200 150 400 Collector-Emitter Saturation Voltage VCE(sat) Ic=-2A,IB=-0.2A -0.3 -0.5 V Base-Emitter Saturation Voltage VBE(sat) Ic=-2A,IB=-0.2A -1.0 -2.0 V Current Gain Bandwidth Product fT VCE=-5V,Ic=-0.1A 80 MHz Output Capacitance Cob VCB=-10V,IE=0,f=1MHz 45 pF Note 1: Pulse test: PW<300µs, Duty Cycle<2% CLASSIFICATION OF hFE2 RANK Q P E RANGE 100 ~ 200 160 ~ 320 200 ~ 400 |
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