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G -LINK
GLT4160L04
4M X 4 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT
May 2001 (Rev.3.1)
G-Link Technology
2701 Northwestern Parkway
Santa Clara, CA 95051, U.S.A.
G-Link Technology Corporation,Taiwan
6F, No. 24-2, Industry E. RD, IV, Science Based
Industrial Park, Hsin Chu, Taiwan.
- 8 -
40
50
60
70
Parameter
Symbol Min. Max. Min. Max. Min. Max. Min. Max. Unit Notes
CAS Hold Time for CAS -before- RAS Cycle
tCHR
8
10
10
15
ns
WE to RAS precharge time ( CAS Before RAS
refresh )
tWRP
10
10
10
10
ns
WE to RAS hold time ( CAS Before RAS
refresh )
tWRH
10
10
10
10
ns
Transition Time
tT
2
50
2
50
2
50
2
50
ns
Refresh Period (2,048 cycles)
tREF
32
32
32
32
ms
Refresh Period (S-Version)
tREF
128
128
128
128
ms
RAS Pulse Width ( CAS Before RAS Self refresh
)
tRASS
100
100
100
100
µs
RAS precharge Time ( CAS Before RAS Self
refresh )
tRPS
70
90
110
130
ns
CAS Hold Time ( CAS Before RAS Self refresh )
tCHS
-50
-50
-50
-50
ns
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