G -LINK
GLT4160L04
4M X 4 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT
May 2001 (Rev.3.1)
G-Link Technology
2701 Northwestern Parkway
Santa Clara, CA 95051, U.S.A.
G-Link Technology Corporation,Taiwan
6F, No. 24-2, Industry E. RD, IV, Science Based
Industrial Park, Hsin Chu, Taiwan.
- 6 -
AC Characteristics
TA =0
°C to 70°C , -20°C to 85°C V
CC = 3.3 V
± 0.3V, VIH/VIL = 3/0 V, V
OH/VOL = 2/0.8V
An initial pause of 200
µs and 8 CAS -before- RAS or RAS -only refresh cycles are required after power-up.
40
50
60
70
Parameter
Symbol Min. Max. Min. Max. Min. Max. Min. Max. Unit Notes
Read or Write Cycle Time
tRC
70
84
104
124
ns
Read Modify Write Cycle Time
tRWC
91
116
140
170
ns
RAS Precharge Time
tRP
25
30
40
50
ns
RAS Pulse Width
tRAS
40
10K
50
10k
60
10k
70
10k
ns
Access Time from RAS
tRAC
40
50
60
70
ns
1,2,3
Access Time from CAS
tCAC
12
13
15
20
ns 1,5,10
Access Time from Column Address
tAA
20
25
30
35
ns
1,5,6
CAS to Output Low-Z
tCLZ
0
3
3
3
ns
CAS to Output High-Z
tCEZ
3
8
3
13
3
15
3
20
ns
RAS Hold Time
tRSH
12
13
15
20
ns
CAS Hold Time
tCSH
34
38
45
50
ns
CAS Pulse Width
tCAS
7
10k
8
10k
10
10k
15
10k
ns
RAS to CAS Delay Time
tRCD
18
28
20
37
20
45
20
50
ns
RAS to Column Address Delay Time
tRAD
13
20
15
25
15
30
15
35
ns
7
CAS to RAS Precharge Time
tCRP
5
5
5
5
ns
Row Address Set-Up Time
tASR
0
0
0
0
ns
Row Address Hold Time
tRAH
8
10
10
10
ns
Column Address Set-Up Time
tASC
0
0
0
0
ns
Column Address Hold Time
tCAH
6
8
10
15
ns
Column Address to RAS Lead Time
tRAL
20
25
30
35
ns
Column Address Hold Time Referenced to RAS
tAR
34
40
45
50
ns
Read Command Set-Up Time
tRCS
0
0
0
0
ns
Read Command Hold Time Referenced to CAS
tRCH
0
0
0
0
ns
4
Read Command Hold Time Referenced to RAS
tRRH
0
0
0
0
ns
4
Write Command Set-Up Time
tWCS
0
0
0
0
ns
8,9
Write Command Hold Time
tWCH
6
10
10
15
ns
Write Command Pulse Width
tWP
6
10
10
15
ns
Write Command to RAS Lead Time
tRWL
12
13
15
30
ns
Write Command to CAS Lead Time
tCWL
8
8
10
15
ns
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