G -LINK
GLT4160L04
4M X 4 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT
May 2001 (Rev.3.1)
G-Link Technology
2701 Northwestern Parkway
Santa Clara, CA 95051, U.S.A.
G-Link Technology Corporation,Taiwan
6F, No. 24-2, Industry E. RD, IV, Science Based
Industrial Park, Hsin Chu, Taiwan.
- 3 -
Absolute Maximum Ratings*
Capacitance*
TA=25
°C, V
CC=3.3V
±0.3V, V
SS=0V
Operating Temperature, TA (ambient)
.............................................….0
°C to
+70
°C
For Extended Temperature……………..-20
°C to 85°C
Storage Temperature(plastic)............-55
°C to +150°C
Voltage Relative to VSS........................-0.5V to + 4.6V
Short Circuit Output Current...............................20mA
Power Dissipation...............................................1.0W
Symbol
CIN1
CIN2
COUT
Parameter
Address Input
RAS, CAS, WE, OE
Data Input/Output
Max.
5
7
7
Unit
pF
pF
pF
*Note: Operation above Absolute Maximum Ratings can
aversely affect device reliability.
*Note: Capacitance is sampled and not 100% tested
Electrical Specifications
l
All voltages are referenced to GND.
l
After power up, wait more than 200
µs and then, execute eight CAS -before-RAS or RAS -only
refresh cycles as dummy cycles to initialize internal circuit.
Block Diagram :
NO.2 CLOCK
GENERATOR
COLUMN-
ADDRESS
BUFFER(11)
REFRESH
CONTROLLER
REFRESH
COUNTER
ROW
ADDRESS
BUFFERS(11)
NO.1 CLOCK
GENERATOR
11
11
A1
A2
A3
A4
A5
A6
A7
A8
A9
A10
RAS
11
11
COLUMN
DECODER
DATA-OUT
BUFFER
DATA-IN
BUFFER
SENSE AMPLIFIERS
I/O GATING
2048 x 1024 x 4
MEMORY
ARRAY
2048
2048
4
4
4
4
WE
CAS
DQ0
DQ1
DQ2
DQ3
OE
VDD
VSS
2048
A0
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