K4M51163PC-RF75 datasheet(6/12 Pages) SAMSUNG

Part #	K4M51163PC-RF75

Description	8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

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Manufacturer	SAMSUNG [Samsung semiconductor]

Direct Link	http://www.samsung.com/Products/Semiconductor

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6 / 12 page

K4M51163PC - R(B)E/G/C/F

February 2006

Mobile SDRAM

1.8V

13.9K

Ω

10.6K

Ω

Output

20pF

VOH (DC) = VDDQ - 0.2V, IOH = -0.1mA

VOL (DC) = 0.2V, IOL = 0.1mA

Vtt=0.5 x VDDQ

50

Ω

Output

20pF

Z0=50

Ω

Figure 2. AC Output Load Circuit

Figure 1. DC Output Load Circuit

AC OPERATING TEST CONDITIONS(VDD = 1.7V ∼ 1.95V, TA = -25 ~ 85°C for Extended, -25 ~ 70°C for Commercial)

Parameter

Value

Unit

AC input levels (Vih/Vil)

0.9 x VDDQ / 0.2

V

Input timing measurement reference level

0.5 x VDDQ

V

Input rise and fall time

tr/tf = 1/1

ns

Output timing measurement reference level

0.5 x VDDQ

V

Output load condition

See Figure 2

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K4M51163PC-RF75 Datasheet(PDF) 6 Page - Samsung semiconductor

K4M51163PC-RF75 Datasheet(HTML) 6 Page - Samsung semiconductor

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