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100B4R7CP500X Datasheet(PDF) 1 Page - Freescale Semiconductor, Inc

Part # 100B4R7CP500X
Description  RF LDMOS Wideband Integrated Power Amplifiers
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Manufacturer  FREESCALE [Freescale Semiconductor, Inc]
Direct Link  http://www.freescale.com
Logo FREESCALE - Freescale Semiconductor, Inc

100B4R7CP500X Datasheet(HTML) 1 Page - Freescale Semiconductor, Inc

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MW4IC001NR4 MW4IC001MR4
1
RF Device Data
Freescale Semiconductor
RF LDMOS Wideband Integrated
Power Amplifiers
The MW4IC001 wideband integrated circuit is designed for use as a distortion
signature device in analog predistortion systems. It uses Freescale’s newest
High Voltage (26 to 28 Volts) LDMOS IC technology. Its wideband On Chip
design makes it usable from 800 MHz to 2170 MHz. The linearity performances
cover all modulations for cellular applications: GSM EDGE, TDMA, CDMA and
W-CDMA.
• Typical CW Performance at 2170 MHz, 28 Volts, IDQ = 12 mA
Output Power — 900 mW PEP
Power Gain — 13 dB
Efficiency — 38%
• High Gain, High Efficiency and High Linearity
• Designed for Maximum Gain and Insertion Phase Flatness
• Excellent Thermal Stability
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• N Suffix Indicates Lead-Free Terminations
• In Tape and Reel. R4 Suffix = 100 Units per 12 mm, 7 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
- 0.5, +65
Vdc
Gate-Source Voltage
VGS
- 0.5, +15
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
4.58
0.037
W
W/°C
Storage Temperature Range
Tstg
- 65 to +150
°C
Operating Junction Temperature
TJ
150
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case @ 85°C
RθJC
27.3
°C/W
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
0 (Minimum)
Machine Model
M1 (Minimum)
Charge Device Model
C2 (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD 22-A113, IPC/JEDEC J-STD-020
3
260
°C
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
MW4IC001MR4
Rev. 3, 1/2005
Freescale Semiconductor
Technical Data
800-2170 MHz, 900 mW, 28 V
W-CDMA
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
CASE 466-03, STYLE 1
PLD-1.5
PLASTIC
MW4IC001NR4
MW4IC001MR4
 Freescale Semiconductor, Inc., 2005. All rights reserved.


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