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100B4R7CP500X Datasheet(PDF) 1 Page - Freescale Semiconductor, Inc |
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100B4R7CP500X Datasheet(HTML) 1 Page - Freescale Semiconductor, Inc |
1 / 16 page MW4IC001NR4 MW4IC001MR4 1 RF Device Data Freescale Semiconductor RF LDMOS Wideband Integrated Power Amplifiers The MW4IC001 wideband integrated circuit is designed for use as a distortion signature device in analog predistortion systems. It uses Freescale’s newest High Voltage (26 to 28 Volts) LDMOS IC technology. Its wideband On Chip design makes it usable from 800 MHz to 2170 MHz. The linearity performances cover all modulations for cellular applications: GSM EDGE, TDMA, CDMA and W-CDMA. • Typical CW Performance at 2170 MHz, 28 Volts, IDQ = 12 mA Output Power — 900 mW PEP Power Gain — 13 dB Efficiency — 38% • High Gain, High Efficiency and High Linearity • Designed for Maximum Gain and Insertion Phase Flatness • Excellent Thermal Stability • Characterized with Series Equivalent Large-Signal Impedance Parameters • N Suffix Indicates Lead-Free Terminations • In Tape and Reel. R4 Suffix = 100 Units per 12 mm, 7 inch Reel. Table 1. Maximum Ratings Rating Symbol Value Unit Drain-Source Voltage VDSS - 0.5, +65 Vdc Gate-Source Voltage VGS - 0.5, +15 Vdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 4.58 0.037 W W/°C Storage Temperature Range Tstg - 65 to +150 °C Operating Junction Temperature TJ 150 °C Table 2. Thermal Characteristics Characteristic Symbol Value Unit Thermal Resistance, Junction to Case @ 85°C RθJC 27.3 °C/W Table 3. ESD Protection Characteristics Test Conditions Class Human Body Model 0 (Minimum) Machine Model M1 (Minimum) Charge Device Model C2 (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Rating Package Peak Temperature Unit Per JESD 22-A113, IPC/JEDEC J-STD-020 3 260 °C NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. MW4IC001MR4 Rev. 3, 1/2005 Freescale Semiconductor Technical Data 800-2170 MHz, 900 mW, 28 V W-CDMA RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS CASE 466-03, STYLE 1 PLD-1.5 PLASTIC MW4IC001NR4 MW4IC001MR4 Freescale Semiconductor, Inc., 2005. All rights reserved. |
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