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MA2Z331 Datasheet(PDF) 1 Page - Panasonic Semiconductor |
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MA2Z331 Datasheet(HTML) 1 Page - Panasonic Semiconductor |
1 / 2 page 1 Variable Capacitance Diodes MA2Z331 Silicon epitaxial planar type I Features • Small series resistance r D. rD = 0.18 Ω (typ.) • Good linearity of C − V curve • Small type package, optimum for down-sizing of equipment I Absolute Maximum Ratings T a = 25 °C Unit : mm Parameter Symbol Rating Unit Reverse voltage (DC) VR 12 V Forward current (DC) IF 20 mA Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Parameter Symbol Conditions Min Typ Max Unit Reverse current (DC) IR VR = 12 V 10 nA Diode capacitance CD(1V) VR = 1 V, f = 1 MHz 17.0 20.0 pF CD(2V) VR = 2 V, f = 1 MHz 14.0 15.0 16.0 pF CD(4V) VR = 4 V, f = 1 MHz 10.0 12.4 pF CD(10V) VR = 10 V, f = 1 MHz 5.5 6.0 6.5 pF Capacitance ratio CD(1V)/CD(4V) 1.53 1.6 1.83 CD(2V)/CD(10V) 2.25 2.5 2.75 Series resistance* rD CD = 9 pF, f = 470 MHz 0.18 0.22 Ω I Electrical Characteristics T a = 25 °C Note) 1 .Rated input/output frequency: 470 MHz 2 .*: rf measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER Marking Symbol: 6T 1 : Anode 2 : Cathode S-Mini Type Package (2-pin) 2.5 ± 0.2 1.7 ± 0.1 0.4 ± 0.15 12 0.4 ± 0.15 INDICATES CATHODE |
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