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HAL114UA-E Datasheet(PDF) 4 Page - Micronas |
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HAL114UA-E Datasheet(HTML) 4 Page - Micronas |
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4 / 17 page  HAL11x 4 Micronas 1.4. Operating Junction Temperature Range The Hall sensors from Micronas are specified to the chip temperature (junction temperature TJ). K: TJ = –40 °C to +140 °C E: TJ = –40 °C to +100 °C C: TJ = 0 °C to +100 °C The relationship between ambient temperature (TA) and junction temperature is explained in section 5.2. on page 14. 1.5. Hall Sensor Package Codes Type: 11x HAL XXXPA-T Temperature Range: K, E, or C Package: SF for SOT-89B UA for TO-92UA (SO for SOT-89A) → Type: 114 → Package: TO-92UA → Temperature Range: TJ = –40 °C to +100 °C Example: HAL 114UA-E Hall sensors are available in a wide variety of packaging versions and quantities. For more detailed information, please refer to the brochure: “Ordering Codes for Hall Sensors”. 1.6. Solderability all packages: according to IEC68-2-58 During soldering reflow processing and manual reworking, a component body temperature of 260 °C should not be exceeded. Components stored in the original packaging should provide a shelf life of at least 12 months, starting from the date code printed on the labels, even in environments as extreme as 40 °C and 90% relative humidity. OUT GND 3 2 1 VDD Fig. 1–1: Pin configuration 2. Functional Description The HAL 11x sensors are monolithic integrated circuits which switch in response to magnetic fields. If a magnetic field with flux lines perpendicular to the sensitive area is applied to the sensor, the biased Hall plate forces a Hall voltage proportional to this field. The Hall voltage is compared with the actual threshold level in the comparator. The temperature-dependent bias increases the supply voltage of the Hall plates and adjusts the switching points to the decreasing induction of magnets at higher temperatures. If the magnetic field exceeds the threshold levels, the open drain output switches to the appropriate state. The built-in hysteresis eliminates oscillation and provides switching behavior of output without bouncing. Shunt protection devices clamp voltage peaks at the Output-pin and VDD-pin together with external series resistors. Reverse current is limited at the VDD-pin by an internal series resistor up to –15 V. No external reverse protection diode is needed at the VDD-pin for reverse voltages ranging from 0 V to –15 V. Temperature Dependent Bias Hysteresis Control Comparator Output VDD 1 OUT 3 Hall Plate GND 2 Fig. 2–1: HAL 11x block diagram HAL 11x Short Circuit & Overvoltage Protection Reverse Voltage & Overvoltage Protection |
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Similar Description - HAL114UA-E |
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