HAL115UA-E datasheet(7/17 Pages) MICRONAS

Part #	HAL115UA-E

Description	Hall Effect Sensor Family

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Manufacturer	MICRONAS [Micronas]

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HAL11x

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Micronas

3.6. Electrical Characteristics at TJ = –40 °C to +140 °C , VDD = 4.5 V to 24 V, as not otherwise specified in Conditions

Typical Characteristics for TJ = 25 °C and VDD = 12 V

Symbol

Parameter

Pin No.

Min.

Typ.

Max.

Unit

Conditions

IDD

Supply Current

1

6

8.2

11

mA

TJ = 25 °C

IDD

Supply Current over

Temperature Range

1

3.9

8.2

12

mA

VOL

Output Voltage over

Temperature Range

3

–

120

400

mV

IOL = 12.5 mA

VOL

Output Voltage over

Temperature Range

3

–

190

500

mV

IOL = 20 mA

IOH

Output Leakage Current

3

–

0.06

1

µA

B < Boff,

TJ = 25 °C, VOH = 0 to 24 V

IOH

Output Leakage Current over

Temperature Range

3

–

10

µA

B < Boff,

VOH = 0 to 24 V

ten(O)

Enable Time of Output after

Setting of VDD

1

–

6

10

µs

VDD = 12 V

B > BON + 2 mT or

B < BOFF – 2 mT

tr

Output Rise Time

3

–

0.08

0.4

µs

VDD = 12 V, RL = 820 Ohm,

CL = 20 pF

tf

Output Fall Time

3

–

0.06

0.4

µs

VDD = 12 V, RL = 820 Ohm,

CL = 20 pF

RthJSB

case

SOT-89A

SOT-89B

Thermal Resistance Junction

to Substrate Backside

–

150

200

K/W

Fiberglass Substrate

30 mm x 10 mm x 1.5mm,

pad size see Fig. 3–4

RthJA

case

TO-92UA

Thermal Resistance Junction

to Soldering Point

–

150

200

K/W

Fig. 3–4: Recommended pad size SOT-89x

Dimensions in mm

5.0

2.0

1.0

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