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4AM13 Datasheet(PDF) 2 Page - Hitachi Semiconductor |
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4AM13 Datasheet(HTML) 2 Page - Hitachi Semiconductor |
2 / 10 page 4AM13 2 Outline Absolute Maximum Ratings (Ta = 25°C) (1 Unit) Rating Item Symbol Nch Pch Unit Drain to source voltage VDSS 60 –60 V Gate to source voltage VGSS ±20 ±20 V Drain current ID 3 –3 A Drain peak current ID(pulse)* 1 12 –12 A Body to drain diode reverse drain current IDR 3 –3 A Channel dissipation Pch (Tc = 25°C)*2 28 W Channel dissipation Pch*2 4 W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. 4 Devices operation |
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