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BUF653 Datasheet(PDF) 1 Page - TEMIC Semiconductors |
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BUF653 Datasheet(HTML) 1 Page - TEMIC Semiconductors |
1 / 8 page BUF653 TELEFUNKEN Semiconductors Rev. A3, 18-Jul-97 1 (8) Silicon NPN High Voltage Switching Transistor Features D Simple-sWitch-Off Transistor (SWOT) D HIGH SPEED technology D Planar passivation D 100 kHz switching rate D Very low switching losses D Very low dynamic saturation D Very low operating temperature D Optimized RBSOA D High reverse voltage Applications Electronic lamp ballast circuits Switch-mode power supplies 14283 Absolute Maximum Ratings Tcase = 25°C, unless otherwise specified Parameter Test Conditions Symbol Value Unit Collector-emitter voltage VCEO 400 V g VCEW 500 V VCES 700 V Emitter-base voltage VEBO 11 V Collector current IC 11 A Collector peak current ICM 16.5 A Base current IB 5.5 A Base peak current IBM 8 A Total power dissipation Tcase ≤ 25 °C Ptot 70 W Junction temperature Tj 150 °C Storage temperature range Tstg –65 to +150 °C Maximum Thermal Resistance Tcase = 25°C, unless otherwise specified Parameter Test Conditions Symbol Value Unit Junction case RthJC 1.78 K/W |
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