3

NR040506

HV732

I

NNEN

V

-

-140

-180

μA

P

I

LLQ

V

-

1.0

5.0

μA

---

I

LLEN

V

-

16

25

μA

P

I

LNQ

V

-

-1.0

-5.0

μA

---

I

LNEN

V

-

-230

-320

μA

P

Operating Supply Voltages and Current (cont.)

(Over recommended operating conditions unless otherwise specified: AV

Symbol

Parameter

Min

Typ

Max

Units

Conditions

DC Electrical Characteristics

(Over recommended operating conditions unless otherwise specified: AV

Symbol

Parameter

Min

Typ

Max

Units

Conditions

Output P-Channel MOSFET, TX

P

I

OUT

Output saturation current

-2.0

-

-

A

V

R

ON

Channel resistance

-

-

8

Ω

V

R

GS

Gate to source resistor

10

-

50

KΩ

I

V

GS

Source to gate zener voltage

-13.2

-

-25

V

I

V

GSF

Gate zener forward voltage

-0.5

-

-0.8

V

---

V

GS(th)

Gate threshold voltage

-1.0

-

-2.4

V

I

C

ISS

Input capacitance

-

-

200

pF

V

C

OSS

Output capacitance

-

25

55

pF

Output N-Channel MOSFET, TX

N

I

OUT

Output saturation current

2.0

-

-

A

V

R

ON

Channel resistance

-

7.0

Ω

V

R

GS

Gate to source resistor

10

-

50

KΩ

I

V

GS

Source to gate zener voltage

13.2

-

25

V

I

V

GSF

Gate zener forward voltage

0.5

-

0.8

V

---

V

GS(th)

Gate threshold voltage

1.0

-

2.0

V

I

C

ISS

Input capacitance

-

-

110

pF

V

C

OSS

Output capacitance

-

28

60

pF

Symbol

Parameter

Min

Typ

Max

Units

Conditions

Output P-Channel Damp MOSFET, OUT

P

I

OUT

Output saturation current

-

-1.0

-

A

V

R

ON

Channel resistance

-

-

30

Ω

V

R

GS

Gate to source resistor

-

75

100

KΩ

I

V

GS

Source to gate zener voltage

-13.2

-

-25

V

I

V

GSF

Gate zener forward voltage

0.5

-

0.8

V

---

V

GS(th)

Gate threshold voltage

-1.0

-

-2.6

V

I

C

ISS

Input capacitance

-

-

200

pF

V

C

OSS

Output capacitance

-

-

60

pF

Symbol

Parameter

Min

Typ

Max

Units

Conditions