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HV732 Datasheet(PDF) 3 Page - Supertex, Inc |
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HV732 Datasheet(HTML) 3 Page - Supertex, Inc |
3 / 10 page 3 NR040506 HV732 I NNEN V DD current EN = High - -140 -180 μA P IN = NIN = Low, VPP = +100V, VNN = -100V I LLQ V DD current EN = Low - 1.0 5.0 μA --- I LLEN V DD current EN = High - 16 25 μA P IN = NIN = Low I LNQ V DD current EN = Low - -1.0 -5.0 μA --- I LNEN V DD current EN = High - -230 -320 μA P IN = NIN = Low Operating Supply Voltages and Current (cont.) (Over recommended operating conditions unless otherwise specified: AV DD = VDD = 12V, VLL = 3.3V, VLN = -5V, TA = 25°C) Symbol Parameter Min Typ Max Units Conditions DC Electrical Characteristics (Over recommended operating conditions unless otherwise specified: AV DD = VDD = 12V, VLL = 3.3V, VLN = -5V, TA = 25°C) Symbol Parameter Min Typ Max Units Conditions Output P-Channel MOSFET, TX P I OUT Output saturation current -2.0 - - A V GS = -10V, VDS = -25V R ON Channel resistance - - 8 Ω V GS = -10V, IDS = -1.0A R GS Gate to source resistor 10 - 50 KΩ I GS = -100μA V GS Source to gate zener voltage -13.2 - -25 V I GS = -2.0μA V GSF Gate zener forward voltage -0.5 - -0.8 V --- V GS(th) Gate threshold voltage -1.0 - -2.4 V I DS = -1.0mA C ISS Input capacitance - - 200 pF V GS = 0V, VDS = -25V, f = 1Mhz C OSS Output capacitance - 25 55 pF Output N-Channel MOSFET, TX N I OUT Output saturation current 2.0 - - A V GS = -10V, VDS = -25V R ON Channel resistance - 7.0 Ω V GS = -10V, IDS = -1.0A R GS Gate to source resistor 10 - 50 KΩ I GS = -100μA V GS Source to gate zener voltage 13.2 - 25 V I GS = -2.0μA V GSF Gate zener forward voltage 0.5 - 0.8 V --- V GS(th) Gate threshold voltage 1.0 - 2.0 V I DS = -1.0mA C ISS Input capacitance - - 110 pF V GS = 0V, VDS = -25V, f = 1Mhz C OSS Output capacitance - 28 60 pF Symbol Parameter Min Typ Max Units Conditions Output P-Channel Damp MOSFET, OUT P I OUT Output saturation current - -1.0 - A V GS = -10V, VDS = -25V R ON Channel resistance - - 30 Ω V GS = -10V, IDS = -1.0A R GS Gate to source resistor - 75 100 KΩ I GS = -100μA V GS Source to gate zener voltage -13.2 - -25 V I GS = -2.0μA V GSF Gate zener forward voltage 0.5 - 0.8 V --- V GS(th) Gate threshold voltage -1.0 - -2.6 V I DS = -1.0mA C ISS Input capacitance - - 200 pF V GS = 0V, VDS = -25V, f = 1Mhz C OSS Output capacitance - - 60 pF Symbol Parameter Min Typ Max Units Conditions |
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