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TPCA8006-H Datasheet(PDF) 3 Page - Toshiba Semiconductor

Part # TPCA8006-H
Description  TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSVII)
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TPCA8006-H Datasheet(HTML) 3 Page - Toshiba Semiconductor

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TPCA8006-H
2004-03-08
3
TENTATIVE
Electrical Characteristics (Ta
= 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±20 V, V DS = 0 V
±100
nA
Drain cut-OFF current
IDSS
VDS = 100 V, V GS = 0 V
100
µA
Drain-source breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
100
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
3.0
5.0
V
Drain-source ON resistance
RDS (ON)
VGS = 10 V , ID = 9 A
41
67
m
Ω
Forward transfer admittance
|Yfs|
VDS = 10 V , ID = 9 A
7.5
15
S
Input capacitance
Ciss
780
Reverse transfer capacitance
Crss
17
Output capacitance
Coss
VDS = 10 V , VGS = 0 V , f = 1 MHz
390
pF
Rise time
tr
(3)
Turn-ON time
ton
(13)
Fall time
tf
2
Switching time
Turn-OFF time
toff
Duty <
= 1%, tw = 10 µs
13
ns
Total gate charge
(gate-source plus gate-drain)
Qg
12
Gate-source charge 1
Qgs1
5.6
Gate-drain (“miller”) charge
Qgd
4.0
Gate switch charge
QSW
VDD ∼
− 80 V, VGS = 10 V , ID = 18 A
6.9
nC
Source-Drain Ratings and Characteristics (Ta
= 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Drain reverse current
Pulse
IDRP
36
A
Forward voltage (diode)
VDSF
IDR = 18 A, V GS = 0 V
−1.7
V
VDD ∼
− 50 V
0 V
VGS
10 V
ID = 9 A
VOUT


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