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TPCA8006-H Datasheet(PDF) 3 Page - Toshiba Semiconductor |
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TPCA8006-H Datasheet(HTML) 3 Page - Toshiba Semiconductor |
3 / 4 page TPCA8006-H 2004-03-08 3 TENTATIVE Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±20 V, V DS = 0 V ±100 nA Drain cut-OFF current IDSS VDS = 100 V, V GS = 0 V 100 µA Drain-source breakdown voltage V (BR) DSS ID = 10 mA, VGS = 0 V 100 V Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 3.0 5.0 V Drain-source ON resistance RDS (ON) VGS = 10 V , ID = 9 A 41 67 m Ω Forward transfer admittance |Yfs| VDS = 10 V , ID = 9 A 7.5 15 S Input capacitance Ciss 780 Reverse transfer capacitance Crss 17 Output capacitance Coss VDS = 10 V , VGS = 0 V , f = 1 MHz 390 pF Rise time tr (3) Turn-ON time ton (13) Fall time tf 2 Switching time Turn-OFF time toff Duty < = 1%, tw = 10 µs 13 ns Total gate charge (gate-source plus gate-drain) Qg 12 Gate-source charge 1 Qgs1 5.6 Gate-drain (“miller”) charge Qgd 4.0 Gate switch charge QSW VDD ∼ − 80 V, VGS = 10 V , ID = 18 A 6.9 nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Drain reverse current Pulse IDRP 36 A Forward voltage (diode) VDSF IDR = 18 A, V GS = 0 V −1.7 V VDD ∼ − 50 V 0 V VGS 10 V ID = 9 A VOUT |
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