1

Schottky Barrier Diodes (SBD)

MA3J745

Silicon epitaxial planar type

For switching circuits

I Features

• Optimum for low-voltage rectification because of its low forward

• Optimum for high-frequency rectification because of its short

I Absolute Maximum Ratings T

Unit : mm

Parameter

Symbol

Rating

Unit

Reverse voltage (DC)

30

V

Peak reverse voltage

30

V

Forward current (DC)

30

mA

Peak forward current

150

mA

Junction temperature

125

°C

Storage temperature

−55 to +125

°C

1 : Anode

2 : NC

3 : Cathode

EIAJ : SC-70

Flat S- Mini Type Package (3-pin)

Marking Symbol: M2M

I Electrical Characteristics T

a

= 25°C

Internal Connection

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Reverse current (DC)

30

µA

Forward voltage (DC)

0.3

V

1.0

V

Terminal capacitance

1.5

pF

1.0

ns

Ω

Detection efficiency

η

65

%

Ω, C

Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a

human body and the leakage of current from the operating equipment.

2. Rated input/output frequency: 2 000 MHz

1.25

± 0.1

0.425

0.425

2.1

± 0.1

1

2

3

1

2

3

Bias Application Unit N-50BU

90%

Pulse Generator

(PG-10N)

R

W.F.Analyzer

(SAS-8130)

R

t

t

δ = 0.05

I

I

R

10%

Input Pulse

Output Pulse

I

t

r

t

p

t

rr

V

R

I

F

t

t

A